| Mfr. #: | STFU13N65M2 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 650V 10A TO-220FP |
| 生命周期: | 制造商新产品。 |
| 数据表: | STFU13N65M2 数据表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 650 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 10 A; The Rds On - Drain-Source Resistance of the product is 430 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 17 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Fall Time of 12 ns - 55 C minimum operating temperature The power dissipation is 25 W. 7.8 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 38 ns; The 11 ns typical turn-on delay time The Unit Weight is 0.081130 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFU13N65M2 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-220FP-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 650 V
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 10 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 430 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 25 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 17 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: At what frequency does the Fall Time?
Q: The product Fall Time is 12 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 25 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 7.8 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 38 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 11 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.081130 oz.