| Mfr. #: | STL120N8F7 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 80V 120A |
| 生命周期: | 制造商新产品。 |
| 数据表: | STL120N8F7 数据表 |
RoHS compliant with Details Input bias current of SMD/SMT Package type is PowerFlat-8 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 80 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 120 A; The Rds On - Drain-Source Resistance of the product is 4.4 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 4 V Gate-Source Threshold Voltage of Vgs th; 60 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 15.4 ns - 55 C minimum operating temperature The power dissipation is 140 W. 16.8 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 60 ns; The 34.5 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STL120N8F7 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed PowerFlat-8
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 80 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 120 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 4.4 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 20 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 4 V
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 60 nC.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 15.4 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 140 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 16.8 ns
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 60 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 34.5 ns.