STL160N3LLH6

Mfr. #: STL160N3LLH6
制造商: STMicroelectronics
描述: Darlington Transistors MOSFET N-Ch 30V 0.0011 Ohm 35A STripFET VI
生命周期: 制造商新产品。
数据表: STL160N3LLH6 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL160N3LLH6 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 80 W This product has a 54 ns of 16 ns. This product has a 32 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 160 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 1.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 61.5 nC.

STL160N3LLH6 Image

STL160N3LLH6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL160N3LLH6 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 80 W
  • Fall-Time 54 ns
  • Rise-Time 32 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 160 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1 V
  • Rds-On-Drain-Source-Resistance 1.1 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 61.5 nC

STL160N3LLH6

STL160N3LLH6 Specifications

STL160N3LLH6 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerFlat-8

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 80 W.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 54 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 32 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 160 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.1 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 61.5 nC.

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