STP100N8F6

Mfr. #: STP100N8F6
制造商: STMicroelectronics
描述: MOSFET N-CH 80V 100A TO220
生命周期: 制造商新产品。
数据表: STP100N8F6 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP100N8F6 Overview

Product belongs to the STripFET F6 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 80V This product has an 5955pF @ 25V value of 300pF @ 25V. This product's Standard. 100A (Tc) continuous drain-ID current at 25°C; This product has an 9 mOhm @ 50A, 10V of 12 Ohm @ 150mA, 0V.

STP100N8F6 Image

STP100N8F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP100N8F6 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STripFET F6
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 176W
  • Drain-to-Source-Voltage-Vdss 80V
  • Input-Capacitance-Ciss-Vds 5955pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 100A (Tc)
  • Rds-On-Max-Id-Vgs 9 mOhm @ 50A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 100nC @ 10V

STP100N8F6

STP100N8F6 Specifications

STP100N8F6 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STripFET F6

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 80V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 5955pF @ 25V

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 100A (Tc)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 9 mOhm @ 50A, 10V.

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US$0.72
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US$6.87
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US$65.06
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US$0.61
US$307.20
1000
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US$578.30
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