STP110N55F6

STP110N55F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 5.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 120 nC.

STP110N55F6 Image

STP110N55F6 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Pd-Power-Dissipation 150 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Id-Continuous-Drain-Current 110 A
• Vds-Drain-Source-Breakdown-Voltage 55 V
• Rds-On-Drain-Source-Resistance 5.2 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 120 nC

STP110N55F6 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel STripFET.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 150 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 110 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 55 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.2 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 120 nC.