STP19NM50N

STP19NM50N Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 150 C This product has a 17 ns of 16 ns. This product has a 16 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 250 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 17 ns This product has a 12 ns. Qg-Gate-Charge is 34 nC.

STP19NM50N Image

STP19NM50N Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 110 W
• Maximum-Operating-Temperature + 150 C
• Fall-Time 17 ns
• Rise-Time 16 ns
• Vgs-Gate-Source-Voltage +/- 25 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 250 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 17 ns
• Typical-Turn-On-Delay-Time 12 ns
• Qg-Gate-Charge 34 nC

STP19NM50N FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 17 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 16 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 14 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 500 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 250 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 17 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 12 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 34 nC.