| Mfr. #: | STP210N75F6 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | IGBT Transistors MOSFET N-Ch 75V 3mOhm 120A STripFET VI |
| 生命周期: | 制造商新产品。 |
| 数据表: | STP210N75F6 数据表 |


Product belongs to the STP210N75F6 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The 3.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 171 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP210N75F6 Specifications
A: At what frequency does the Series?
Q: The product Series is STP210N75F6.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 300 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.7 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 171 nC.