STP2N62K3

Mfr. #: STP2N62K3
制造商: STMicroelectronics
描述: IGBT Transistors MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3
生命周期: 制造商新产品。
数据表: STP2N62K3 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP2N62K3 Overview

Product belongs to the STP2N62K3 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 2.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 620 V. The 3.6 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 15 nC.

STP2N62K3 Image

STP2N62K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP2N62K3 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STP2N62K3
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 2.2 A
  • Vds-Drain-Source-Breakdown-Voltage 620 V
  • Rds-On-Drain-Source-Resistance 3.6 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 15 nC

STP2N62K3

STP2N62K3 Specifications

STP2N62K3 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STP2N62K3

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 45 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 2.2 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 620 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 3.6 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 15 nC.

1680 In Stock
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数量
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1
US$0.87
US$0.87
10
US$0.83
US$8.30
100
US$0.79
US$78.60
500
US$0.74
US$371.15
1000
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US$698.60
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