| Mfr. #: | STP30N10F7 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 100V 32A TO220AB |
| 生命周期: | 制造商新产品。 |
| 数据表: | STP30N10F7 数据表 |
Tube is the packaging method for this product Through Hole Mounting-Style TO-220 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5.6 ns of 16 ns. This product has a 17.5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 32 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22 ns This product has a 12 ns. Qg-Gate-Charge is 19 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP30N10F7 Specifications
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 50 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 5.6 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 17.5 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 32 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 24 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 22 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 12 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 19 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is -.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement
A: At what frequency does the Development-Kit?
Q: The product Development-Kit is -.