STP45N65M5

Mfr. #: STP45N65M5
制造商: STMicroelectronics
描述: MOSFET N-CH 650V 35A TO220
生命周期: 制造商新产品。
数据表: STP45N65M5 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP45N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 3375pF @ 100V value of 300pF @ 25V. This product's Standard. 35A (Tc) continuous drain-ID current at 25°C; This product has an 78 mOhm @ 19.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 208 W The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 78 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STP45N65M5 Image

STP45N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP45N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh V
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 210W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 650V
  • Input-Capacitance-Ciss-Vds 3375pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 35A (Tc)
  • Rds-On-Max-Id-Vgs 78 mOhm @ 19.5A, 10V
  • Vgs-th-Max-Id 5V @ 250μA
  • Gate-Charge-Qg-Vgs 91nC @ 10V
  • Pd-Power-Dissipation 208 W
  • Id-Continuous-Drain-Current 35 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 78 mOhms
  • Transistor-Polarity N-Channel

STP45N65M5

STP45N65M5 Specifications

STP45N65M5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh V

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 650V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 3375pF @ 100V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 35A (Tc)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 78 mOhm @ 19.5A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 208 W.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 35 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 78 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

1680 In Stock
Can ship immediately
Please enter the quantity you need to buy.
数量
单价
小计金额
1
US$4.82
US$4.82
10
US$4.58
US$45.77
100
US$4.34
US$433.64
500
US$4.10
US$2 047.75
1000
US$3.85
US$3 854.50
Top