STP75N75F4

STP75N75F4 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 150 W This product has a 14 ns of 16 ns. This product has a 33 ns of 16 ns. The ID of continuous drain current is 78 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 11 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 61 ns This product has a 25 ns. Qg-Gate-Charge is 76 nC. This product operates in Enhancement channel mode for optimal performance.

STP75N75F4 Image

STP75N75F4 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 150 W
• Fall-Time 14 ns
• Rise-Time 33 ns
• Id-Continuous-Drain-Current 78 A
• Vds-Drain-Source-Breakdown-Voltage 75 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 11 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 61 ns
• Typical-Turn-On-Delay-Time 25 ns
• Qg-Gate-Charge 76 nC
• Channel-Mode Enhancement

STP75N75F4 FAQ

• A: At what frequency does the Series?

  Q: The product Series is N-channel STripFET.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 150 W.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 14 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 33 ns.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 78 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 11 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 61 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 25 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 76 nC

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.