| Mfr. #: | STU6N65K3 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | RF Bipolar Transistors MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 |
| 生命周期: | 制造商新产品。 |
| 数据表: | STU6N65K3 数据表 |


Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style Trade name: SuperMESH. IPAK-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 24 ns of 16 ns. This product has a 10 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 5.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3.75 V Vgs-th gate-source threshold voltage for efficient power management. The 1.1 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 44 ns This product has a 14 ns. Qg-Gate-Charge is 33 nC. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU6N65K3 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Tradename?
Q: The product Tradename is SuperMESH.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is IPAK-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 24 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 10 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 5.4 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3.75 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 1.1 Ohms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 44 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 14 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 33 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.