| Mfr. #: | STULED623 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | RF Bipolar Transistors MOSFET N-Ch 620V 3.0 Ohm 3.0A IPAK |
| 生命周期: | 制造商新产品。 |
| 数据表: | STULED623 数据表 |
Product belongs to the STULED623 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 620 V. The 3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STULED623 Specifications
A: What is the Series of the product?
Q: The Series of the product is STULED623.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is IPAK-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 620 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3 Ohms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel