| Mfr. #: | STW10N105K5 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | IGBT Transistors MOSFET POWER MOSFET |
| 生命周期: | 制造商新产品。 |
| 数据表: | STW10N105K5 数据表 |
Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21.5 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 1.3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50 ns This product has a 19 ns. Qg-Gate-Charge is 21.5 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW10N105K5 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh K5.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 130 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 21.5 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 8 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 6 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 1050 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 1.3 Ohms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 50 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 19 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 21.5 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement