STW120NF10

STW120NF10 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 5200pF @ 25V value of 300pF @ 25V. This product's Standard. 110A (Tc) continuous drain-ID current at 25°C; This product has an 10.5 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 312 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 68 ns of 16 ns. This product has a 90 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 132 ns This product has a 25 ns. This product operates in Enhancement channel mode for optimal performance.

STW120NF10 Image

STW120NF10 Specifications

• Manufacturer STMicroelectronics
• Product Category IC Chips
• Series STripFET II
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 312W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 100V
• Input-Capacitance-Ciss-Vds 5200pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 110A (Tc)
• Rds-On-Max-Id-Vgs 10.5 mOhm @ 60A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 233nC @ 10V
• Pd-Power-Dissipation 312 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 68 ns
• Rise-Time 90 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 110 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Rds-On-Drain-Source-Resistance 9 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 132 ns
• Typical-Turn-On-Delay-Time 25 ns
• Channel-Mode Enhancement

STW120NF10 FAQ

• A: At what frequency does the Series?

  Q: The product Series is STripFET II.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-247-3

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 5200pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 110A (Tc)

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 10.5 mOhm @ 60A, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 312 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 68 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 90 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 110 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 9 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 132 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 25 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement