| Mfr. #: | STW17N62K3 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | IGBT Transistors MOSFET N-Ch 620V .34 Ohm 15A SuperMESH3 |
| 生命周期: | 制造商新产品。 |
| 数据表: | STW17N62K3 数据表 |
Product belongs to the STW17N62K3 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 150 C This product has a 63 ns of 16 ns. This product has a 26 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 620 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 380 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 91 ns This product has a 25 ns. Qg-Gate-Charge is 94 nC. This product features a 1.6 V of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW17N62K3 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STW17N62K3
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 1.340411 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 190 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 63 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 26 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 30 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 15 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 620 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 380 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 91 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 25 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 94 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 1.6 V.