| Mfr. #: | STW27N60M2-EP |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 600V 20A TO-220 |
| 生命周期: | 制造商新产品。 |
| 数据表: | STW27N60M2-EP 数据表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 163 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 33 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 6.3 ns - 55 C minimum operating temperature The power dissipation is 170 W. 8.1 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 55.6 ns; The 13.4 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW27N60M2-EP Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 600 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 20 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 163 mOhms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 25 V.
A: What is the Vgs th - Gate-Source Threshold Voltage of the product?
Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 33 nC.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 6.3 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 170 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 8.1 ns.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 55.6 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 13.4 ns.