| Mfr. #: | STW33N60DM2 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 600V 24A |
| 生命周期: | 制造商新产品。 |
| 数据表: | STW33N60DM2 数据表 |
Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9 ns of 16 ns. This product has a 8 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 24 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 130 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 62 ns This product has a 17 ns. Qg-Gate-Charge is 43 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW33N60DM2 Specifications
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 1.340411 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-247-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 190 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 9 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 8 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 25 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 24 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 130 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 62 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 43 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement