STW57N65M5-4

Mfr. #: STW57N65M5-4
制造商: STMicroelectronics
描述: MOSFET N CH 650V 42A TO247-4
生命周期: 制造商新产品。
数据表: STW57N65M5-4 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW57N65M5-4 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-247-4 Si is the technology used. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 9 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 42 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 98 nC.

STW57N65M5-4 Image

STW57N65M5-4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW57N65M5-4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-247-4
  • Technology Si
  • Pd-Power-Dissipation 250 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8 ns
  • Rise-Time 9 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 42 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 63 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 98 nC

STW57N65M5-4

STW57N65M5-4 Specifications

STW57N65M5-4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-4.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 250 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 8 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 9 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 42 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 63 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 98 nC

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US$116.00
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