| Mfr. #: | STX13005 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT POWER TRANSISTOR |
| 生命周期: | 制造商新产品。 |
| 数据表: | STX13005 数据表 |
Product belongs to the 500V to 1000V Transistors series. Bulk Alternate Packaging is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Through Hole mounting type Supplier device package: TO-92-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 3A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 8 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 5V @ 750mA, 3A Power-off control: 2800 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 3 A Minimum hfe for DC collector-base gain is 10.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STX13005 Specifications
A: What is the Series of the product?
Q: The Series of the product is 500V to 1000V Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Bulk Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.016000 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-226-3, TO-92-3 (TO-226AA).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-92-3.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 3A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 400V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 8 @ 2A, 5V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 5V @ 750mA, 3A
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 2800 mW.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 400 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 9 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 3 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 10