| Mfr. #: | STY139N65M5 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 650V 130A MAX247 |
| 生命周期: | 制造商新产品。 |
| 数据表: | STY139N65M5 数据表 |
Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: MAX247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 15600pF @ 100V value of 300pF @ 25V. This product's Standard. 130A (Tc) continuous drain-ID current at 25°C; This product has an 17 mOhm @ 65A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 625 mW This product's 25 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 14 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 363 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STY139N65M5 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh V.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 1.340411 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed MAX247
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 15600pF @ 100V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 130A (Tc).
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 17 mOhm @ 65A, 10V
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 625 mW
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 25 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 130 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 14 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 363 nC