| Mfr. #: | TIP110 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | TRANS NPN DARL 60V 2A TO220AB |
| 生命周期: | 制造商新产品。 |
| 数据表: | TIP110 数据表 |


Product belongs to the - series. Bulk Alternate Packaging is the packaging method for this product Weight of 0.042823 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220 Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 1A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 2.5V @ 8mA, 2A Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. The 60 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 1000 at 1 A at 4 V 500 at 2 A at 4 V. 1000 uA Maximum Collector Cut-off Current;

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TIP110 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed -
A: At what frequency does the Packaging?
Q: The product Packaging is Bulk Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.042823 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN - Darlington.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 2A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 1000 @ 1A, 4V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 2.5V @ 8mA, 2A.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 60 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 60 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 2 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 1000 at 1 A at 4 V 500 at 2 A at 4 V.
A: What is the Maximum-Collector-Cut-off-Current of the product?
Q: The Maximum-Collector-Cut-off-Current of the product is 1000 uA.