| Mfr. #: | TIP35CW |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT HIGH POWER TRANS |
| 生命周期: | 制造商新产品。 |
| 数据表: | TIP35CW 数据表 |
Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 25A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 10 @ 15A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 5A, 25A Power-off control: 125000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is NPN PNP. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 A Gain-Bandwidth-Product: 3 MHz Minimum hfe for DC collector-base gain is 25.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TIP35CW Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed 500V Transistors
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-247-3.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 25A
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 10 @ 15A, 4V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 4V @ 5A, 25A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 125000 mW
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 100 V
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN PNP.
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 100 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 25 A
A: At what frequency does the Gain-Bandwidth-Product-fT?
Q: The product Gain-Bandwidth-Product-fT is 3 MHz.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 25.