TP2104N3-G

TP2104N3-G Overview

Product belongs to the - series. Alternate Packaging is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-92-3 Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 40V This product has an 60pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 175mA (Tj) continuous drain-ID current at 25°C; This product has an 6 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 740 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns of 16 ns. This product has a 4 ns of 16 ns. This product's 20 V. The ID of continuous drain current is - 250 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof - 40 V. The 6 Ohms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 5 ns This product has a 4 ns. This product operates in Enhancement channel mode for optimal performance.

TP2104N3-G Image

TP2104N3-G Specifications

• Manufacturer Microchip Technology
• Product Category IC Chips
• Series -
• Packaging Alternate Packaging
• Unit-Weight 0.016000 oz
• Mounting-Style Through Hole
• Package-Case TO-226-3, TO-92-3 (TO-226AA)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-92-3
• Configuration Single
• FET-Type MOSFET P-Channel, Metal Oxide
• Power-Max 740mW
• Transistor-Type 1 P-Channel
• Drain-to-Source-Voltage-Vdss 40V
• Input-Capacitance-Ciss-Vds 60pF @ 25V
• FET-Feature Logic Level Gate
• Current-Continuous-Drain-Id-25°C 175mA (Tj)
• Rds-On-Max-Id-Vgs 6 Ohm @ 500mA, 10V
• Vgs-th-Max-Id 2V @ 1mA
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 740 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 4 ns
• Rise-Time 4 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current - 250 mA
• Vds-Drain-Source-Breakdown-Voltage - 40 V
• Rds-On-Drain-Source-Resistance 6 Ohms
• Transistor-Polarity P-Channel
• Typical-Turn-Off-Delay-Time 5 ns
• Typical-Turn-On-Delay-Time 4 ns
• Channel-Mode Enhancement

TP2104N3-G FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Alternate Packaging

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.016000 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-226-3, TO-92-3 (TO-226AA)

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-92-3.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET P-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 P-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 40V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 60pF @ 25V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Logic Level Gate.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 175mA (Tj).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 6 Ohm @ 500mA, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 740 mW

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 4 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 4 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is - 250 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 40 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 6 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is P-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 5 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 4 ns.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.