| Mfr. #: | ULN2002ANE4 |
|---|---|
| 制造商: | Texas Instruments |
| 描述: | Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays |
| 生命周期: | 制造商新产品。 |
| 数据表: | ULN2002ANE4 数据表 |
Product belongs to the ULN2002A series. Tube Alternate Packaging is the packaging method for this product Weight of 0.033570 oz Through Hole Mounting-Style 16-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 16-PDIP Configuration Array 7 Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA Maximum operating temperature of + 70 C Minimum operating temperature: - 20 C Rated VCEO up to 50 V The transistor polarity is NPN. Max DC collector current: 0.5 A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2002ANE4 Specifications
A: At what frequency does the Series?
Q: The product Series is ULN2002A.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.033570 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is 16-DIP (0.300", 7.62mm).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 16-PDIP
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Array 7
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 7 NPN Darlington.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 500mA.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 50V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is -.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.6V @ 500μA, 350mA.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 70 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 20 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 50 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 0.5 A.