SI4834CDY-T1-E3

SI4834CDY-T1-E3
Mfr. #:
SI4834CDY-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4834CDY-T1-E3 数据表
交货:
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HTML Datasheet:
SI4834CDY-T1-E3 DatasheetSI4834CDY-T1-E3 Datasheet (P4-P6)SI4834CDY-T1-E3 Datasheet (P7-P9)SI4834CDY-T1-E3 Datasheet (P10-P12)SI4834CDY-T1-E3 Datasheet (P13-P15)
ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
卷带 (TR)
部分别名
SI4834CDY-E3
单位重量
0.006596 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双路肖特基二极管
FET型
2 N-Channel (Dual)
最大功率
2.9W
晶体管型
2 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
950pF @ 15V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
3V @ 1mA
栅极电荷-Qg-Vgs
25nC @ 10V
钯功耗
2 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
10 ns
上升时间
12 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
7.5 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
20 mOhms
晶体管极性
N通道
典型关断延迟时间
19 ns 18 ns
典型开启延迟时间
17 ns
通道模式
增强
Tags
SI4834C, SI4834, SI483, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
***ark
Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:7.5A; On State Resistance:0.022ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Junction Temperature, Tj:150°C; Power Dissipation Pd:1.1W; Rise Time:10ns; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:0.8V
型号 制造商 描述 库存 价格
SI4834CDY-T1-E3
DISTI # SI4834CDY-T1-E3-ND
Vishay SiliconixMOSFET 2N-CH 30V 8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.5390
SI4834CDY-T1-E3
DISTI # 781-SI4834CDY-E3
Vishay IntertechnologiesMOSFET 30V 8.0A 2.9W 20mohm @ 10V
RoHS: Compliant
0
  • 1:$1.2300
  • 10:$1.0100
  • 100:$0.7740
  • 500:$0.6660
  • 1000:$0.5840
SI4834CDY-T1-E3Vishay IntertechnologiesMOSFET 30V 8.0A 2.9W 20mohm @ 10V
RoHS: Compliant
Americas -
    图片 型号 描述
    SI4834CDY-T1-GE3

    Mfr.#: SI4834CDY-T1-GE3

    OMO.#: OMO-SI4834CDY-T1-GE3

    MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
    SI4834CDY-T1-GE3

    Mfr.#: SI4834CDY-T1-GE3

    OMO.#: OMO-SI4834CDY-T1-GE3-VISHAY

    IGBT Transistors MOSFET 30V 8A / 8A DUAL NCH MOSFET w/Shottky
    SI4834CDY-T1-E3

    Mfr.#: SI4834CDY-T1-E3

    OMO.#: OMO-SI4834CDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
    SI4834CDY

    Mfr.#: SI4834CDY

    OMO.#: OMO-SI4834CDY-1190

    全新原装
    可用性
    库存:
    Available
    订购:
    3500
    输入数量:
    SI4834CDY-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.81
    US$0.81
    10
    US$0.77
    US$7.68
    100
    US$0.73
    US$72.77
    500
    US$0.69
    US$343.60
    1000
    US$0.65
    US$646.80
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