IS66WVC4M16EALL-7010BLI

IS66WVC4M16EALL-7010BLI
Mfr. #:
IS66WVC4M16EALL-7010BLI
制造商:
ISSI
描述:
DRAM Pseudo SRAM 64Mb
生命周期:
制造商新产品。
数据表:
IS66WVC4M16EALL-7010BLI 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS66WVC4M16EALL-7010BLI 更多信息
产品属性
属性值
制造商:
国际空间站
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
PSRAM(伪SRAM)
数据总线宽度:
16 bit
组织:
4 M x 16
包装/案例:
VFBGA-54
内存大小:
64 Mbit
最大时钟频率:
104 MHz
访问时间:
70 ns
电源电压 - 最大值:
1.95 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
30 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
IS66WVC4M16EALL
品牌:
国际空间站
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
480
子类别:
内存和数据存储
单位重量:
0.003034 oz
Tags
IS66WVC4M16EA, IS66WVC4M16E, IS66WVC4, IS66WVC, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    N***V
    N***V
    RU

    All ok.

    2019-07-11
    I***v
    I***v
    UZ

    The goods are received on time and in good quality.Long live the communist party of china!Goods received on time and in good quality.Long live the chinese communist party!

    2019-05-29
***
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 7 ns 54-VFBGA (6x8)
***I SCT
Cellular RAM Pseudo SRAM, 4Mx16, 1.7 to 1.95V, 70ns, VFBGA-54
***ical
PSRAM Async Single Port 64M-bit 4M x 16 70ns 54-Pin VFBGA
***ark
64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v
***i-Key
IC PSRAM 64MBIT PARALLEL 54VFBGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
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Mfr.#: TXS0104ERGYR

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Mfr.#: SIP32509DT-T1-GE3

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Power Switch ICs - Power Distribution 1.1V to 5.5V Slew Rt 3A Cntrld Load Swtch
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Mfr.#: TPS62822DLCR

OMO.#: OMO-TPS62822DLCR

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TPS73201QDBVRQ1

Mfr.#: TPS73201QDBVRQ1

OMO.#: OMO-TPS73201QDBVRQ1

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Mfr.#: TSH122ICT

OMO.#: OMO-TSH122ICT

Video Amplifiers ULTRA LOW POWER VID BUFFER/FILTER P DOWN
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Mfr.#: TSH122ICT

OMO.#: OMO-TSH122ICT-STMICROELECTRONICS

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TXS0104ERGYR

Mfr.#: TXS0104ERGYR

OMO.#: OMO-TXS0104ERGYR-TEXAS-INSTRUMENTS

Translation - Voltage Levels 4B Bidirec Vltg- Level Translato
TPS73201QDBVRQ1

Mfr.#: TPS73201QDBVRQ1

OMO.#: OMO-TPS73201QDBVRQ1-TEXAS-INSTRUMENTS

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47272-0001

Mfr.#: 47272-0001

OMO.#: OMO-47272-0001-721

HDMI, Displayport & DVI Connectors .5MM RA SMT RCPT
可用性
库存:
Available
订购:
1989
输入数量:
IS66WVC4M16EALL-7010BLI的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.79
US$5.79
10
US$5.28
US$52.80
25
US$5.14
US$128.50
100
US$4.61
US$461.00
250
US$4.60
US$1 150.00
500
US$4.31
US$2 155.00
1000
US$4.13
US$4 130.00
2500
US$3.80
US$9 500.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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