2SK4197FS

Mfr. #:: 2SK4197FS
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V 3.3A TO-220F-3
生命周期:: 制造商新产品。
数据表:: 2SK4197FS 数据表
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ECAD Model:

产品属性
属性值

制造商: 安森美半导体

产品分类: 晶体管 - FET、MOSFET - 单

系列: 2SK4197FS

打包: 管子

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 2 W

Id 连续漏极电流: 3.5 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 3.25 Ohms

晶体管极性: N通道

Tags: 2SK4197, 2SK419, 2SK41, 2SK4, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK4197FS 描述

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 2W 12ns

***emi: N-Channel Power MOSFET, 600V, 3.5A, 3.25Ω, TO-220F-3FS N-Channel Power MOSFET, 600V, 3.5A, 3.25Ohm, TO-220F-3FS

***r Electronics: Power Field-Effect Transistor, 3.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 600V 3.3A 3-Pin(3+Tab) TO-220F-3FS

***(Formerly Allied Electronics): 2SK4198FS N-channel MOSFET Transistor; 5 A; 600 V; 3-Pin TO-220F

***emi: N-Channel Power MOSFET, 600V, 5A, 2.34Ohm, TO-220F-3FS

***ical: Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220F-3FS Tube

***icroelectronics: N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in TO-220 package

***ure Electronics: N-Channel 525 V 2.6 Ohm Flange Mount PowerMesh Power MosFet - TO-220

***et: Trans MOSFET N-CH 525V 2.5A 3-Pin(3+Tab) TO-220FP Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 525V, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***nell: MOSFET, N CH, 525V, 2.5A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 2.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 20W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F

***ure Electronics: Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F

***enic: 900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***i-Key: MOSFET N-CH 500V 3A TO-220F

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ser: MOSFETs N-CH/400V/ .6A/3.4OHM

***icroelectronics: N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP

***(Formerly Allied Electronics): STP4NK60ZFP, N-channel MOSFET Transistor 4A 600V, 3-Pin TO-220FP

*** Source Electronics: MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

型号	制造商	描述	库存	价格
2SK4197FS DISTI # 2SK4197FS-ND	ON Semiconductor	MOSFET N-CH 600V 3.3A TO-220F-3 RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
2SK4197FS DISTI # 863-2SK4197FS	ON Semiconductor	MOSFET NCH 10V DRIVE SERIES RoHS: Compliant	0
2SK4197FS	ON Semiconductor	RoHS: Not Compliant	59461	1000:$0.7100 500:$0.7400 100:$0.7700 25:$0.8100 1:$0.8700

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2SK4197FS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes