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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC883N03MSGATMA1 DISTI # BSC883N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 19A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03MS G DISTI # 726-BSC883N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 19A TDSON-8 RoHS: Compliant | 0 | |
| BSC883N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 73343 |
|
| BSC883N03MS G | Infineon Technologies AG | 4777 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G |
MOSFET N-Ch 30V 65A TDSON-8 |
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Mfr.#: BSC882N03MS OMO.#: OMO-BSC882N03MS-1190 |
全新原装 |
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Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
全新原装 |
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Mfr.#: BSC883N03LSGATMA1 , TDZF |
全新原装 |
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Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
全新原装 |
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Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC884N03MS OMO.#: OMO-BSC884N03MS-1190 |
全新原装 |
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Mfr.#: BSC884N03MSG OMO.#: OMO-BSC884N03MSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190 |
全新原装 |
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Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 |