RJH60F6DPK-00#T0

Mfr. #:: RJH60F6DPK-00#T0
制造商:: Renesas Electronics
描述:: IGBT Transistors IGBT
生命周期:: 制造商新产品。
数据表:: RJH60F6DPK-00#T0 数据表
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产品属性
属性值

制造商：: 瑞萨电子

产品分类：: IGBT晶体管

RoHS：: Y

技术：: 硅

打包：: 管子

品牌：: 瑞萨电子

湿气敏感：: 是的

产品类别：: IGBT晶体管

出厂包装数量：: 1

子类别：: IGBT

Tags: RJH60F6DPK, RJH60F6D, RJH60F6, RJH60F, RJH60, RJH6, RJH

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH60F6DPK-00#T0 描述

***et: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube

***i-Key: IGBT 600V 85A 297.6W TO-3P

*** Electronic Components: IGBT Transistors IGBT

***ical: Trans IGBT Chip N-CH 600V 178A 540000mW 3-Pin(3+Tab) PLUS 247

***el Electronic: IC QUAD DIFF COMPARATOR 14-TSSOP

***aconductors: Insulated Gate Bipolar Transistors

***ure Electronics: IXGX72N60C3H1 Series 600 V 75 A Through Hole High-Speed PT IGBT - PLUS247

***i-Key: IGBT 600V 75A 540W PLUS247

***et: Trans IGBT Chip N-CH 600V 85A 3-Pin TO-247A Tube

***i-Key: IGBT 600V 85A 297.6W TO-247A

*** Electronic Components: IGBT Transistors IGBT

***ernational Rectifier: 600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications

***p One Stop: Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 80A 428000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW75N60T Series 600 V 75 A Through Hole TRENCHSTOP IGBT - PG-TO247-3

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT, N, 600V, 75A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:75A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:428W; Power Dissipation Pd:428W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 75 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 428 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V CEsat drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V CEsat; Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability

***p One Stop: Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 100A 600V 333W Through Hole

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

图片	型号	描述
	Mfr.#: RJH60F6DPQ-A0#T0 OMO.#: OMO-RJH60F6DPQ-A0-T0	IGBT Transistors IGBT
	Mfr.#: RJH60F6DPK-00#T0 OMO.#: OMO-RJH60F6DPK-00-T0	IGBT Transistors IGBT
	Mfr.#: RJH60F6DPK OMO.#: OMO-RJH60F6DPK-1190	全新原装
	Mfr.#: RJH60F6DPK-AO OMO.#: OMO-RJH60F6DPK-AO-1190	全新原装
	Mfr.#: RJH60F6DPQ OMO.#: OMO-RJH60F6DPQ-1190	全新原装

RJH60F6DPK-00#T0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes