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S29GL01GS11FHSS60

S29GL01GS11FHSS60
Mfr. #:
S29GL01GS11FHSS60
制造商:
Cypress Semiconductor
描述:
NOR Flash Nor
生命周期:
制造商新产品。
数据表:
S29GL01GS11FHSS60 数据表
交货:
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ECAD Model:
更多信息:
S29GL01GS11FHSS60 更多信息 S29GL01GS11FHSS60 Product Details
产品属性
属性值
制造商：
赛普拉斯半导体
产品分类：
NOR闪存
RoHS：
Y
安装方式：
贴片/贴片
包装/案例：
FBGA-64
系列：
S29GL01G/512/256/128S
内存大小：
1 Gbit
接口类型：
平行线
组织：
128 M x 8
计时类型：
异步
数据总线宽度：
8 bit
电源电压 - 最小值：
2.7 V
电源电压 - 最大值：
3.6 V
电源电流 - 最大值：
100 mA
打包：
托盘
内存类型：
也不
速度：
110 ns
建筑学：
MirrorBit Eclipse
品牌：
赛普拉斯半导体
湿气敏感：
是的
产品类别：
NOR闪存
标准：
通用闪存接口 (CFI)
出厂包装数量：
180
子类别：
内存和数据存储
商品名：
MirrorBit Eclipse
Tags
S29GL01GS11FHS, S29GL01GS11FH, S29GL01GS11F, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEAT
***i-Key
IC FLASH 1GBIT PARALLEL 64FBGA
***NGYU ELECTRONICS
IC FLASH 1G PARALLEL 64BGA
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 90 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL128P Series 128 Mb (16M x 8) 3 V 90 ns Flash-NOR Memory - BGA-64
***et
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray
***ark
IC, FLASH MEM, 128MBIT, 90NS, 64-BGA; Memory Type:Flash - NOR; Memory Size:128Mbit; Memory Configuration:-; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:90ns; MSL:- ;RoHS Compliant: Yes
***ical
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL256P Series 256 Mb (32M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64
***nell
MEMORY, FLASH, 256MBIT, 64FBGA; Memory Type:Flash; Memory Size:256Mbit; Memory Configuration:(Not Applicable); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
***p One Stop
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 M (32 M x 8) 3.6 V 110 ns Surface Mount Flash Memory - FBGA-64
***nell
IC, MEMORY, FLASH, 256MBIT, FBGA-64; Memory Type:Flash - NOR; Memory Size:256Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:110ns; IC Interface Type:CFI; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
***p One Stop Global
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns Automotive 64-Pin FBGA T/R
***ron SCT
NOR Flash, Legacy NOR Flash, 128Mb, 2.7V-3.6V, 64-ball FBGA, RoHS
***i-Key
PARALLEL NOR SLC 8MX16 LBGA
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
型号 制造商 描述 库存 价格
S29GL01GS11FHSS60
DISTI # S29GL01GS11FHSS60-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 180
Container: Tray		Temporarily Out of Stock
  • 180:$8.8898
S29GL01GS11FHSS60
DISTI # 727-S29GL01GS11FHSS6		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 180:$10.0300
  • 360:$9.1400
  • 540:$8.5500
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S29GL01GS11TFV020

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S29GL01GT11DHAV23

Mfr.#: S29GL01GT11DHAV23

OMO.#: OMO-S29GL01GT11DHAV23

 NOR Flash IC 1 Gb FLASH MEMORY
S29GL01GT10FAI020

Mfr.#: S29GL01GT10FAI020

OMO.#: OMO-S29GL01GT10FAI020-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL Automotive, AEC-Q100, GL-T
S29GL01GT10TFI030

Mfr.#: S29GL01GT10TFI030

OMO.#: OMO-S29GL01GT10TFI030-CYPRESS-SEMICONDUCTOR

 NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns Tray
S29GL01GT11TFB020

Mfr.#: S29GL01GT11TFB020

OMO.#: OMO-S29GL01GT11TFB020-CYPRESS-SEMICONDUCTOR

 NOR Flash No
S29GL01GS11DHV020

Mfr.#: S29GL01GS11DHV020

OMO.#: OMO-S29GL01GS11DHV020-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GS11TFI013

Mfr.#: S29GL01GS11TFI013

OMO.#: OMO-S29GL01GS11TFI013-CYPRESS-SEMICONDUCTOR

 Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29GL01GS11DHB020

Mfr.#: S29GL01GS11DHB020

OMO.#: OMO-S29GL01GS11DHB020-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64BGA Automotive, AEC-Q100, GL-S
可用性
库存:
Available
订购:
2500
输入数量:
S29GL01GS11FHSS60的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
180
US$10.03
US$1 805.40
360
US$9.14
US$3 290.40
540
US$8.55
US$4 617.00
1080
US$7.85
US$8 478.00
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