FDD10N20LZTM

Mfr. #:: FDD10N20LZTM
制造商:: ON Semiconductor
描述:: MOSFET N-CH 200V 7.6A DPAK-3
生命周期:: 制造商新产品。
数据表:: FDD10N20LZTM 数据表
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更多信息:: FDD10N20LZTM 更多信息

产品属性
属性值

制造商: 金融服务中心

产品分类: FET - 单

Tags: FDD10N, FDD10, FDD1, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD10N20LZTM 更多信息

N-Channel PowerTrench® MOSFETs: ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more

Market price

型号	制造商	描述	库存	价格
FDD10N20LZTM DISTI # FDD10N20LZTMCT-ND	ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4398In Stock	1000:$0.4107 500:$0.5073 100:$0.6764 10:$0.8690 1:$0.9900
FDD10N20LZTM DISTI # FDD10N20LZTMDKR-ND	ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4398In Stock	1000:$0.4107 500:$0.5073 100:$0.6764 10:$0.8690 1:$0.9900
FDD10N20LZTM DISTI # FDD10N20LZTMTR-ND	ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3635
FDD10N20LZTM DISTI # FDD10N20LZTM	ON Semiconductor	Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2539 5000:$0.2519 10000:$0.2489 15000:$0.2459 25000:$0.2399
FDD10N20LZTM DISTI # FDD10N20LZTM	ON Semiconductor	Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3579 5000:€0.2929 10000:€0.2679 15000:€0.2479 25000:€0.2299
FDD10N20LZTM DISTI # FDD10N20LZTM	ON Semiconductor	Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.2650 5000:$0.2548 7500:$0.2453 12500:$0.2366 25000:$0.2284 62500:$0.2208 125000:$0.2172
FDD10N20LZTM DISTI # 27T6420	ON Semiconductor	UF 200V 360MOHM L DPAK / REEL	0	1:$0.3020 2500:$0.3000 10000:$0.2890 25000:$0.2800
FDD10N20LZTM DISTI # 46AC0763	ON Semiconductor	MOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2182	1:$1.0000 10:$0.8210 25:$0.7280 50:$0.6500 100:$0.5600 250:$0.4950 500:$0.3960 1000:$0.3820
FDD10N20LZTM DISTI # 512-FDD10N20LZTM	ON Semiconductor	MOSFET 200V N-Channel MOSFET, UniFET RoHS: Compliant	5208	1:$0.8000 10:$0.6610 100:$0.4270 1000:$0.3420 2500:$0.2880 10000:$0.2780 25000:$0.2670
FDD10N20LZTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	214732	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
FDD10N20LZTM DISTI # 2825151	ON Semiconductor	MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant	2182	5:$1.2500 25:$1.0700 100:$0.7310 250:$0.6000 500:$0.4910 1000:$0.4540 5000:$0.4280
FDD10N20LZTM DISTI # 2825151	ON Semiconductor	MOSFET, N-CH, 200V, 7.6A, TO-252-3 RoHS: Compliant	2187	5:£0.7300 25:£0.6530 100:£0.5040 250:£0.4390 500:£0.3730

图片	型号	描述
	Mfr.#: FDD10N20LZTM OMO.#: OMO-FDD10N20LZTM	MOSFET 200V N-Channel MOSFET, UniFET
	Mfr.#: FDD10N20LZ OMO.#: OMO-FDD10N20LZ-1190	全新原装
	Mfr.#: FDD10N20LZTM OMO.#: OMO-FDD10N20LZTM-ON-SEMICONDUCTOR	MOSFET N-CH 200V 7.6A DPAK-3
	Mfr.#: FDD10N20LZTM,FDD10N20LZ OMO.#: OMO-FDD10N20LZTM-FDD10N20LZ-1190	全新原装

FDD10N20LZTM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes