NTMFS4H01NT1G

Mfr. #:: NTMFS4H01NT1G
制造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET NFET SO8FL 25V 334A 700MO
生命周期:: 制造商新产品。
数据表:: NTMFS4H01NT1G 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

制造商: 安森美半导体

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

技术: 硅

Tags: NTMFS4H01NT, NTMFS4H01N, NTMFS4H01, NTMFS4H, NTMFS4, NTMFS, NTMF, NTM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMFS4H01NT1G 描述

***Semiconductor: Single N−Channel Power MOSFET 25V, 334A, 0.7mΩ

***ure Electronics: Single N-Channel 25 V 0.97 mOhm 39 nC 3.2 W Silicon SMT Mosfet - DFN-5

***ical: Trans MOSFET N-CH 25V 54A 5-Pin(4+Tab) SO-FL T/R

***et: Trans MOSFET N-CH 25V 54A 8-Pin SO-FL T/R

***i-Key: MOSFET N-CH 25V 54A SO8FL

***ark: MOSFET, N-CH, 25V, 334A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:334A; Drain Source Voltage Vds:25V; On Resistance Rds(on):550�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation RoHS Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 25V, 334A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:334A; Drain Source Voltage Vds:25V; On Resistance Rds(on):550µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:125W; Transistor Case Style:DFN; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, N-CH, 25V, 334A, DFN; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:334A; Napięcie drenu / źródła Vds:25V; Rezystancja przewodzenia Rds(on):550µohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:2.1V; Straty mocy Pd:125W; Rodzaj obudowy tranzystora:DFN; Liczba pinów:5piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:Lead (27-Jun-2018)

Market price

型号	制造商	描述	库存	价格
NTMFS4H01NT1G DISTI # NTMFS4H01NT1G-ND	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$0.8613
NTMFS4H01NT1G DISTI # NTMFS4H01NT1G	ON Semiconductor	Trans MOSFET N-CH 25V 54A 8-Pin SO-FL T/R (Alt: NTMFS4H01NT1G) RoHS: Compliant Min Qty: 1500 Container: Tape and Reel	Asia - 0
NTMFS4H01NT1G DISTI # NTMFS4H01NT1G	ON Semiconductor	Trans MOSFET N-CH 25V 54A 8-Pin SO-FL T/R - Tape and Reel (Alt: NTMFS4H01NT1G) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$0.7049 3000:$0.7009 6000:$0.6919 9000:$0.6829 15000:$0.6659
NTMFS4H01NT1G DISTI # 68X4379	ON Semiconductor	NFET SO8FL 25V 334A 700MO / REEL	0	1:$1.5200 25:$1.2200 100:$1.1100 250:$0.9990 500:$0.8970 1000:$0.8700 1500:$0.7190 3000:$0.6970
NTMFS4H01NT1G DISTI # 14AC4773	ON Semiconductor	MOSFET, N-CH, 25V, 334A, DFN,Transistor Polarity:N Channel,Continuous Drain Current Id:334A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power , RoHS Compliant: Yes	900	1:$1.8900 10:$1.6600 25:$1.5000 50:$1.3400 100:$1.1700 250:$1.0000 500:$0.9120 1000:$0.8640
NTMFS4H01NT1G DISTI # 863-NTMFS4H01NT1G	ON Semiconductor	MOSFET NFET SO8FL 25V 334A 700MO RoHS: Compliant	0	1500:$0.7300 4500:$0.7030 9000:$0.6750
NTMFS4H01NT1G DISTI # 2728033	ON Semiconductor	MOSFET, N-CH, 25V, 334A, DFN RoHS: Compliant	900	1:$3.1600 10:$2.7100 100:$1.8500
NTMFS4H01NT1G DISTI # 2728033	ON Semiconductor	MOSFET, N-CH, 25V, 334A, DFN RoHS: Compliant	900	1:£2.8500 10:£2.7900 100:£2.7400

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