MSC040SMA120S

Mfr. #:: MSC040SMA120S
制造商:: Microchip / Microsemi
描述:: Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
生命周期:: 制造商新产品。
数据表:: MSC040SMA120S 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MSC040SMA120S 更多信息

产品属性
属性值

Tags: MSC040S, MSC040, MSC04, MSC0, MSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MSC040SMA120S 描述

***hardson RFPD: SILICON CARBIDE MOSFETS

***i-Key: MOSFET N-CH 1200V D3PAK

MSC040SMA120S 更多信息

SiC Schottky Barrier Diodes: Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Next Generation SiC MOSFETs: Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.

Market price

型号	制造商	描述	库存	价格
MSC040SMA120S DISTI # V36:1790_21671880	Microsemi Corporation	MSC040SMA120S	0	30000:$21.8600 15000:$21.8700 3000:$24.3300 300:$30.4300 30:$31.5600
MSC040SMA120S DISTI # MSC040SMA120S-ND	Microsemi Corporation	MOSFET N-CH 1200V D3PAK Min Qty: 1 Container: Tube	30In Stock	250:$23.7084 100:$24.8529 25:$27.7960 10:$29.1040 1:$31.5600
MSC040SMA120S DISTI # MSC040SMA120S	Microchip Technology Inc	Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube - Rail/Tube (Alt: MSC040SMA120S) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 0	300:$20.2900 150:$20.5900 90:$21.2900 60:$21.9900 30:$22.6900
MSC040SMA120S DISTI # 494-MSC040SMA120S	Microchip Technology Inc	MOSFET UNRLS, FG, SIC MOSFET, TO-268 RoHS: Compliant	0	1:$31.5600 5:$31.3000 10:$29.1000 25:$26.9300 50:$26.2500 100:$24.5900 250:$22.7300
MSC040SMA120S DISTI # MSC040SMA120S	Microsemi Corporation	SILICON CARBIDE MOSFETS RoHS: Compliant	400	1:$29.1500 10:$27.6000 25:$21.4400 50:$20.9000 100:$20.6400

图片	型号	描述
	Mfr.#: MSC040SMA120B OMO.#: OMO-MSC040SMA120B	MOSFET UNRLS, FG, SIC MOSFET, TO-247
	Mfr.#: MSC040SMA120J OMO.#: OMO-MSC040SMA120J	MOSFET UNRLS, FG, SIC MOSFET, SOT-227
	Mfr.#: MSC040SMA120S OMO.#: OMO-MSC040SMA120S	MOSFET UNRLS, FG, SIC MOSFET, TO-268
	Mfr.#: MSC040SMA120S OMO.#: OMO-MSC040SMA120S-1190	Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
	Mfr.#: MSC04020D2942BE100 OMO.#: OMO-MSC04020D2942BE100-1190	全新原装
	Mfr.#: MSC040SMA120B OMO.#: OMO-MSC040SMA120B-1190	SILICON CARBIDE POWER TRANSISTORS/MODULES

MSC040SMA120S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes