AS4C64M16D1A-6BIN

AS4C64M16D1A-6BIN
Mfr. #:
AS4C64M16D1A-6BIN
制造商:
Alliance Memory
描述:
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
生命周期:
制造商新产品。
数据表:
AS4C64M16D1A-6BIN 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C64M16D1A-6BIN 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
SDRAM - DDR
数据总线宽度:
16 bit
组织:
64 M x 16
包装/案例:
FBGA-60
内存大小:
1 Gbit
最大时钟频率:
166 MHz
访问时间:
0.7 ns
电源电压 - 最大值:
2.7 V
电源电压 - 最小值:
2.3 V
电源电流 - 最大值:
180 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
AS4C64M16D1A
打包:
托盘
品牌:
联盟记忆
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
240
子类别:
内存和数据存储
Tags
AS4C64M16D1A, AS4C64M16D1, AS4C64M16D, AS4C64M1, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    UA

    Got as much as i ordered, until i checked. Packing is simple package. Delivery 22 days.Seller recommend.

    2019-04-12
    T***k
    T***k
    RU

    Although not very fast, but still satisfied

    2019-07-03
    L***i
    L***i
    IT

    Great product

    2019-04-25
    E**n
    E**n
    US

    minuteria ben suddivisa

    2019-07-09
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
图片 型号 描述
AS4C64M16MD2-25BCN

Mfr.#: AS4C64M16MD2-25BCN

OMO.#: OMO-AS4C64M16MD2-25BCN

DRAM 1G 1.2V/1.8V 400MHz 64Mx16 Mobile DDR2
AS4C64M16D3A-12BCN

Mfr.#: AS4C64M16D3A-12BCN

OMO.#: OMO-AS4C64M16D3A-12BCN

DRAM 1G 1.5V 800MHz 64M x 16 DDR3
AS4C64M16MD1-6BCN

Mfr.#: AS4C64M16MD1-6BCN

OMO.#: OMO-AS4C64M16MD1-6BCN-ALLIANCE-MEMORY

DRAM 1G 1.8V 166Mhz 64M x 16 Mobile DDR
AS4C64M16D3-12BCN

Mfr.#: AS4C64M16D3-12BCN

OMO.#: OMO-AS4C64M16D3-12BCN-ALLIANCE-MEMORY

DRAM 1G, 1.5V, 1600Mhz 64M x 16 DDR3
AS4C64M16D2A-25BCN

Mfr.#: AS4C64M16D2A-25BCN

OMO.#: OMO-AS4C64M16D2A-25BCN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 84FBGA
AS4C64M16D2A-25BINTR

Mfr.#: AS4C64M16D2A-25BINTR

OMO.#: OMO-AS4C64M16D2A-25BINTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 84FBGA
AS4C64M16D3B-12BCNTR

Mfr.#: AS4C64M16D3B-12BCNTR

OMO.#: OMO-AS4C64M16D3B-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16D3A-12BCNTR

Mfr.#: AS4C64M16D3A-12BCNTR

OMO.#: OMO-AS4C64M16D3A-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16D3LA-12BANTR

Mfr.#: AS4C64M16D3LA-12BANTR

OMO.#: OMO-AS4C64M16D3LA-12BANTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16MD1A-5BINTR

Mfr.#: AS4C64M16MD1A-5BINTR

OMO.#: OMO-AS4C64M16MD1A-5BINTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 60FBGA
可用性
库存:
240
订购:
2223
输入数量:
AS4C64M16D1A-6BIN的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$24.19
US$24.19
5
US$23.05
US$115.25
10
US$22.53
US$225.30
25
US$22.28
US$557.00
50
US$21.73
US$1 086.50
100
US$19.08
US$1 908.00
250
US$17.94
US$4 485.00
500
US$17.20
US$8 600.00
从...开始
最新产品
Top