IPP65R310CFDXKSA1

IPP65R310CFDXKSA1
Mfr. #:
IPP65R310CFDXKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
生命周期:
制造商新产品。
数据表:
IPP65R310CFDXKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IPP65R310CFDXKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
11.4 A
Rds On - 漏源电阻:
280 mOhms
Vgs th - 栅源阈值电压:
3.5 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
41 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
104.2 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
高度:
15.65 mm
长度:
10 mm
系列:
CoolMOS CFD2
晶体管类型:
1 N-Channel
宽度:
4.4 mm
品牌:
英飞凌科技
秋季时间:
7 ns
产品类别:
MOSFET
上升时间:
7.5 ns
出厂包装数量:
500
子类别:
MOSFET
典型关断延迟时间:
45 ns
典型的开启延迟时间:
11 ns
第 # 部分别名:
IPP65R310CFD IPP65R31CFDXK SP000745028
单位重量:
0.211644 oz
Tags
IPP65R31, IPP65R3, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 500, N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1
***ure Electronics
Single N-Channel 650 V 310 mOhm 41 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 700V 11.4A Automotive 3-Pin(3+Tab) TO-220 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 650V 11.4A 3-Pin TO-220 Tube
***ronik
N-CH 650V 11,4A 280mOhm TO220-3 RoHSconf
***i-Key
LOW POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 11.4A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 11.4A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104.2W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 11,4A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:104.2W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPP65R310CFDXKSA1
DISTI # V99:2348_06382968
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 5000:$1.1057
  • 2500:$1.1232
  • 500:$1.3961
  • 100:$1.5939
  • 25:$1.7892
  • 10:$1.9880
  • 1:$2.5645
IPP65R310CFDXKSA1
DISTI # V36:1790_06382968
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$0.9712
  • 250000:$0.9731
  • 50000:$1.1010
  • 5000:$1.3070
  • 500:$1.3400
IPP65R310CFDXKSA1
DISTI # IPP65R310CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 11.4A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
500In Stock
  • 5000:$1.0938
  • 2500:$1.1358
  • 500:$1.4724
  • 100:$1.7921
  • 25:$2.1036
  • 10:$2.2300
  • 1:$2.4800
IPP65R310CFDXKSA1
DISTI # 33639344
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 6:$2.5645
IPP65R310CFDXK
DISTI # IPP65R310CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP65R310CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$1.0179
  • 3000:$1.0359
  • 2000:$1.0719
  • 1000:$1.1119
  • 500:$1.1539
IPP65R310CFDXKSA1
DISTI # 13AC9087
Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:11.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1000:$1.1700
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0200
  • 1:$2.3700
IPP65R310CFD
DISTI # 726-IPP65R310CFD
Infineon Technologies AGMOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
RoHS: Compliant
985
  • 1:$2.3500
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4000
  • 1000:$1.1600
IPP65R310CFDXKSA1
DISTI # 726-IPP65R310CFDXKSA
Infineon Technologies AGMOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
RoHS: Compliant
994
  • 1:$2.3500
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4000
  • 1000:$1.1600
IPP65R310CFDXKSA1
DISTI # 8576943
Infineon Technologies AGMOSFET N-CH 700V 11A COOLMOS CFD2 TO-220, TU500
  • 5000:£0.9070
  • 2500:£0.9260
  • 500:£0.9450
IPP65R310CFDXKSA1
DISTI # 2726073
Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-30
  • 500:£1.0800
  • 250:£1.1600
  • 100:£1.2300
  • 10:£1.5500
  • 1:£2.0500
IPP65R310CFDXKSA1
DISTI # 2726073
Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-3
RoHS: Compliant
0
  • 5000:$1.7000
  • 2500:$1.7200
  • 500:$2.2200
  • 100:$2.7100
  • 25:$3.1700
  • 10:$3.3700
  • 1:$3.7400
图片 型号 描述
MIC5205-5.0YM5-TR

Mfr.#: MIC5205-5.0YM5-TR

OMO.#: OMO-MIC5205-5-0YM5-TR

LDO Voltage Regulators 150mA 1% Low Noise LDO
MIC5205-5.0YM5-TR

Mfr.#: MIC5205-5.0YM5-TR

OMO.#: OMO-MIC5205-5-0YM5-TR-MICROCHIP-TECHNOLOGY

IC REG LINEAR 5V 150MA SOT23-5
可用性
库存:
994
订购:
2977
输入数量:
IPP65R310CFDXKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.35
US$2.35
10
US$2.00
US$20.00
100
US$1.60
US$160.00
500
US$1.40
US$700.00
1000
US$1.16
US$1 160.00
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