IPB036N12N3 G

IPB036N12N3 G
Mfr. #:
IPB036N12N3 G
制造商:
Infineon Technologies
描述:
IGBT Transistors MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
生命周期:
制造商新产品。
数据表:
IPB036N12N3 G 数据表
交货:
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ECAD Model:
更多信息:
IPB036N12N3 G 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB036N12N3GATMA1 IPB036N12N3GXT SP000675204
单位重量
0.056438 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-263-7
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
300 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
180 A
Vds-漏-源-击穿电压
120 V
VGS-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
3.6 mOhms
晶体管极性
N通道
Qg-门电荷
158 nC
正向跨导最小值
195 S 98 S
Tags
IPB036N12N3G, IPB036N12N3, IPB036, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB036N12N3GATMA1
DISTI # V72:2272_06378504
Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
980
  • 500:$3.7270
  • 250:$4.1280
  • 100:$4.3500
  • 25:$4.9429
  • 10:$4.9980
  • 1:$5.7480
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.8211
IPB036N12N3 G
DISTI # 30580651
Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant
1852
  • 100:$4.5645
  • 50:$5.5717
  • 10:$5.6227
  • 4:$6.4132
IPB036N12N3GATMA1
DISTI # 31308714
Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
980
  • 500:$3.7210
  • 250:$4.1200
  • 100:$4.3420
  • 25:$4.9330
  • 10:$4.9879
  • 2:$5.7370
IPB036N12N3 G
DISTI # 30578830
Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant
956
  • 4:$7.1250
IPB036N12N3 G
DISTI # IPB036N12N3 G
Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin TO-263 T/R (Alt: IPB036N12N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 3000
  • 1000:$4.1353
  • 2000:$4.0019
  • 3000:$3.8769
  • 5000:$3.7594
  • 10000:$3.7033
  • 25000:$3.6488
  • 50000:$3.5959
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB036N12N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.4900
  • 2000:$3.3900
  • 4000:$3.2900
  • 6000:$3.1900
  • 10000:$3.0900
IPB036N12N3GATMA1
DISTI # 47W3463
Infineon Technologies AGMOSFET, N CHANNEL, 120V, 180A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1169
  • 1:$6.5700
  • 10:$5.5900
  • 25:$5.3400
  • 50:$5.0900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
IPB036N12N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant
2185
  • 1000:$2.6800
  • 500:$2.8300
  • 100:$2.9400
  • 25:$3.0700
  • 1:$3.3000
IPB036N12N3 G
DISTI # 726-IPB036N12N3GXT
Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
1746
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 726-IPB036N12N3GATMA
Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant
311
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 7545428
Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, EA379
  • 1:£4.8500
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GATMA1
DISTI # 7545428P
Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, RL1451
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GInfineon Technologies AG 569
    IPB036N12N3 GInfineon Technologies AG 376
      IPB036N12N3 GInfineon Technologies AGINSTOCK105
        IPB036N12N3-GInfineon Technologies AGINSTOCK105
          IPB036N12N3GATMA1
          DISTI # 2212819
          Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant
          1652
          • 1:£4.6100
          • 10:£3.9200
          • 100:£3.3900
          • 250:£3.2100
          • 500:£2.8900
          IPB036N12N3 G
          DISTI # C1S322000133246
          Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant
          956
          • 100:$4.1500
          • 50:$5.0700
          • 10:$5.1200
          • 1:$5.7000
          IPB036N12N3 G
          DISTI # C1S322000438099
          Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant
          1852
          • 100:$3.5800
          • 50:$4.3700
          • 10:$4.4100
          • 1:$5.0300
          IPB036N12N3GATMA1
          DISTI # C1S322000643035
          Infineon Technologies AGMOSFETs
          RoHS: Compliant
          980
          • 250:$4.1200
          • 100:$4.3420
          • 25:$4.9330
          • 10:$4.9879
          • 1:$5.7370
          IPB036N12N3GATMA1
          DISTI # 2212819
          Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant
          1169
          • 1:$10.4000
          • 10:$8.8500
          • 100:$7.6600
          • 250:$7.2800
          • 500:$6.5300
          • 1000:$5.5100
          IPB036N12N3 GInfineon Technologies AGRoHS(ship within 1day)300
          • 1:$6.7700
          • 10:$5.7700
          • 50:$5.0000
          • 100:$4.7700
          • 500:$4.5800
          • 1000:$4.4800
          图片 型号 描述
          IPB036N12N3 G

          Mfr.#: IPB036N12N3 G

          OMO.#: OMO-IPB036N12N3-G

          MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          IPB036N12N3GATMA1

          Mfr.#: IPB036N12N3GATMA1

          OMO.#: OMO-IPB036N12N3GATMA1

          MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          IPB036N12N3GATMA1

          Mfr.#: IPB036N12N3GATMA1

          OMO.#: OMO-IPB036N12N3GATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 120V 180A TO263-7
          IPB036N12N3-G

          Mfr.#: IPB036N12N3-G

          OMO.#: OMO-IPB036N12N3-G-1190

          INSTOCK
          IPB036N12N

          Mfr.#: IPB036N12N

          OMO.#: OMO-IPB036N12N-1190

          全新原装
          IPB036N12N3

          Mfr.#: IPB036N12N3

          OMO.#: OMO-IPB036N12N3-1190

          全新原装
          IPB036N12N3G

          Mfr.#: IPB036N12N3G

          OMO.#: OMO-IPB036N12N3G-1190

          180 A, 120 V, 0.0036 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263
          IPB036N12N3GTR

          Mfr.#: IPB036N12N3GTR

          OMO.#: OMO-IPB036N12N3GTR-1190

          全新原装
          IPB036N12N3 G

          Mfr.#: IPB036N12N3 G

          OMO.#: OMO-IPB036N12N3-G-126

          IGBT Transistors MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          可用性
          库存:
          Available
          订购:
          3500
          输入数量:
          IPB036N12N3 G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$5.22
          US$5.22
          10
          US$4.96
          US$49.59
          100
          US$4.70
          US$469.80
          500
          US$4.44
          US$2 218.50
          1000
          US$4.18
          US$4 176.00
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