IXFH15N100

Mfr. #:: IXFH15N100
制造商:: IXYS
描述:: MOSFET 15 Amps 1000V 0.7 Rds
生命周期:: 制造商新产品。
数据表:: IXFH15N100 数据表
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产品属性
属性值

制造商: IXYS

产品分类: FET - 单

系列: IXFH15N100

打包: 管子

单位重量: 0.229281 oz

安装方式: 通孔

商品名: 超场效应晶体管

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 360 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 30 ns

上升时间: 30 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 15 A

Vds-漏-源-击穿电压: 1000 V

Rds-On-Drain-Source-Resistance: 700 mOhms

晶体管极性: N通道

典型关断延迟时间: 120 ns

典型开启延迟时间: 27 ns

通道模式: 增强

Tags: IXFH15N1, IXFH15N, IXFH15, IXFH1, IXFH, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH15N100 描述

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Source Voltage Vds:1kV; On Resistance Rds(on):0.7ohm;

***i-Key: MOSFET N-CH 1000V 15A TO-247

***el Electronic: IC UART FIFO 16B DUAL 48TQFP

***el Nordic: Contact for details

***icroelectronics: N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET

***ure Electronics: N-Channel 1 kV 0.7 O 350 W Zener Protected SuperMESH Power MosFet - TO-247

***ark: N Channel Mosfet, 1Kv, 13A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:13A; On Resistance Rds(On):0.7Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***icroelectronics: N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET

***ure Electronics: N Channel 900 V 0.4 O Flange Mount SuperMESH Power Mosfet - TO-247

***nell: MOSFET, N CH, 900V, 15A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po

***r Electronics: Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***icroelectronics: N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET

***ure Electronics: N-Channel 900 V 0.88 Ohm Flange Mount SuperMESH Power MosFet - TO-247-3

***ource: TRANSISTOR | MOSFET | N-CHANNEL | 600V VBRDSS | 12A ID | TO-247

***ark: MOSFET, N-CH, 900V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 11A I(D), 900V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ure Electronics: Single N-Channel 800 V 450 Ohm 64 nC CoolMOS Power Mosfet - TO-247-3

***ment14 APAC: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 450 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 156

***ineon: 800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

***ical: Trans MOSFET N-CH 900V 11A Automotive 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-247; Power Dissipation Pd:156W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Market price

型号	制造商	描述	库存	价格
IXFH15N100Q3 DISTI # 33102012	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	60	2:$7.0800
IXFH15N100Q3 DISTI # IXFH15N100Q3-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	246In Stock	1020:$7.5040 510:$7.7720 120:$9.1120 30:$9.9160 1:$11.7900
IXFH15N100 DISTI # IXFH15N100-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH15N100Q DISTI # IXFH15N100Q-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH15N100P DISTI # IXFH15N100P-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$6.8267
IXFH15N100P DISTI # V36:1790_15877350	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0
IXFH15N100Q3 DISTI # V36:1790_15877354	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0
IXFH15N100 DISTI # 97K2539	IXYS Corporation	MOSFET, N, 15A, 1 KV,TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,No. of Pins:3Pins RoHS Compliant: Yes	0
IXFH15N100P DISTI # 03AH0529	Littelfuse Inc	DISCMOSFETN-CH HIPERFET-POLAR TO-247AD / TUBE	0	500:$4.1700 250:$4.5000 100:$4.7300 50:$5.3300 25:$5.7600 10:$6.6600 1:$7.0000
IXFH15N100Q3 DISTI # 03AH0530	Littelfuse Inc	DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD / TUBE	0	500:$6.7000 250:$7.2400 100:$7.5100 50:$8.0400 25:$9.1700 10:$9.8700 1:$10.4000
IXFH15N100 DISTI # 747-IXFH15N100	IXYS Corporation	MOSFET 15 Amps 1000V 0.7 Rds RoHS: Compliant	0
IXFH15N100Q3 DISTI # 747-IXFH15N100Q3	IXYS Corporation	MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A RoHS: Compliant	690	1:$13.5600 10:$12.3300 25:$11.4000 50:$10.4900 100:$10.2300 250:$9.3800 500:$8.5100 1000:$7.7700
IXFH15N100P DISTI # 747-IXFH15N100P	IXYS Corporation	MOSFET 15 Amps 1000V 0.76 Rds RoHS: Compliant	46	1:$9.5700 10:$8.6200 25:$7.1700 50:$6.6600 100:$6.5100 250:$5.9500 500:$5.4200 1000:$5.1700
IXFH15N100Q DISTI # 747-IXFH15N100Q	IXYS Corporation	MOSFET 15 Amps 1000V 0.725 Rds RoHS: Compliant	0
IXFH15N100Q3 DISTI # 8011389P	IXYS Corporation	MOSFET N-CH 1000V 15A Q3 HIPERFET TO247, TU	1242	15:£8.5200 6:£8.9000
IXFH15N100Q3 DISTI # 8011389	IXYS Corporation	MOSFET N-CH 1000V 15A Q3 HIPERFET TO247, EA	16	15:£8.5200 6:£8.9000 1:£9.2800
IXFH15N100Q3 DISTI # IXFH15N100Q3	IXYS Corporation	Transistor: N-MOSFET,Q3-Class,unipolar,1kV,15A,690W,TO247-3	54	1:$10.9700 3:$9.8700 10:$8.7200 30:$7.8300
IXFH15N100Q			41
IXFH15N100 DISTI # 9359583	IXYS Corporation	MOSFET, N, TO-247 RoHS: Compliant	0	25:$18.5900 10:$19.6400 1:$20.0200

图片	型号	描述
	Mfr.#: IXFH110N10P OMO.#: OMO-IXFH110N10P	MOSFET 110 Amps 100V 0.015 Rds
	Mfr.#: IXFH14N60P OMO.#: OMO-IXFH14N60P	MOSFET 600V 14A
	Mfr.#: IXFH110N25T OMO.#: OMO-IXFH110N25T	MOSFET 110 Amps 0V
	Mfr.#: IXFH14N80P OMO.#: OMO-IXFH14N80P	MOSFET DIODE Id14 BVdass800
	Mfr.#: IXFH18N60X OMO.#: OMO-IXFH18N60X	MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
	Mfr.#: IXFH12N80P OMO.#: OMO-IXFH12N80P	MOSFET DIODE Id12 BVdass800
	Mfr.#: IXFH12N65X2 OMO.#: OMO-IXFH12N65X2	MOSFET 650V/12A TO-247
	Mfr.#: IXFH14N85X OMO.#: OMO-IXFH14N85X-IXYS-CORPORATION	MOSFET N-CH 850V 14A TO247AD
	Mfr.#: IXFH15N100P OMO.#: OMO-IXFH15N100P-IXYS-CORPORATION	Darlington Transistors MOSFET 15 Amps 1000V 0.76 Rds
	Mfr.#: IXFH120N15P OMO.#: OMO-IXFH120N15P-IXYS-CORPORATION	Darlington Transistors MOSFET 120 Amps 150V 0.016 Rds

IXFH15N100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes