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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| RFH10N50 | Harris Semiconductor | Power Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC RoHS: Not Compliant | 330 |
|
| RFH10N50 | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-218 | 4 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: RFH1015 OMO.#: OMO-RFH1015-1190 |
全新原装 |
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Mfr.#: RFH10A15 OMO.#: OMO-RFH10A15-1190 |
全新原装 |
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Mfr.#: RFH10N45 OMO.#: OMO-RFH10N45-1190 |
全新原装 |
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Mfr.#: RFH10N50 OMO.#: OMO-RFH10N50-1190 |
Power Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC |
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Mfr.#: RFH12N35 OMO.#: OMO-RFH12N35-1190 |
全新原装 |
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Mfr.#: RFH12N40 OMO.#: OMO-RFH12N40-1190 |
全新原装 |
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Mfr.#: RFH1H221MIAV OMO.#: OMO-RFH1H221MIAV-1190 |
全新原装 |
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Mfr.#: RFH1H221MIS OMO.#: OMO-RFH1H221MIS-1190 |
全新原装 |