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FQP7N80C

FQP7N80C
Mfr. #:
FQP7N80C
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V N-Ch Q-FET advance C-Series
生命周期:
制造商新产品。
数据表:
FQP7N80C 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
800 V
Id - 连续漏极电流：
6.6 A
Rds On - 漏源电阻：
1.9 Ohms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
167 W
配置：
单身的
频道模式：
增强
商品名：
场效应管
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FQP7N80C
晶体管类型：
1 N-Channel
类型：
MOSFET
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
5.5 S
秋季时间：
60 ns
产品类别：
MOSFET
上升时间：
100 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
50 ns
典型的开启延迟时间：
35 ns
第 # 部分别名：
FQP7N80C_NL
单位重量：
0.063493 oz
Tags
FQP7N80C, FQP7N8, FQP7N, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
***p One Stop Japan
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
***i-Key
MOSFET N-CH 800V 6.6A TO-220
***ark
Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes
***ser
MOSFETs 800V N-Ch Q-FET advance C-Series
***inecomponents.com
800V N-Channel Advance QFET® C-Series
***eco
3 LEAD PLASTIC W/EXPOSED HEATSNK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
型号 制造商 描述 库存 价格
FQP7N80C
DISTI # V36:1790_06359748		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 5000:$0.7437
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 1:$1.7748
FQP7N80C
DISTI # FQP7N80C-ND		ON SemiconductorMOSFET N-CH 800V 6.6A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		389In Stock
  • 1000:$1.2106
  • 500:$1.4611
  • 100:$1.8785
  • 10:$2.3380
  • 1:$2.5900
FQP7N80C
DISTI # 30333733		ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 8:$1.7748
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 525
  • 1000:$0.9039
  • 2000:$0.8799
  • 4000:$0.8569
  • 6000:$0.8349
  • 10000:$0.8139
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1		Europe - 500
  • 1:€1.4339
  • 10:€1.1729
  • 25:€1.0029
  • 50:€0.9099
  • 100:€0.8959
  • 500:€0.8819
  • 1000:€0.8689
FQP7N80C
DISTI # FQP7N80C		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000		Asia - 5000
  • 1000:$0.9900
  • 2000:$0.9519
  • 3000:$0.9167
  • 5000:$0.8839
  • 10000:$0.8535
  • 25000:$0.8250
  • 50000:$0.8115
FQP7N80C
DISTI # 97K0195		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes354
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C.
DISTI # 29AC6380		Fairchild Semiconductor CorporationQFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES525
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C
DISTI # 512-FQP7N80C		ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant		260
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3200
  • 1000:$1.1000
FQP7N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		11110
  • 1000:$1.1700
  • 500:$1.2300
  • 100:$1.2800
  • 25:$1.3400
  • 1:$1.4400
FQP7N80CFairchild Semiconductor Corporation 100
    FQP7N80C
    DISTI # 6715180P    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, TU1269
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80C
    DISTI # 6715180    		ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, PK75
    • 5:£1.4860
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80CFairchild Semiconductor Corporation6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB49
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		354
      • 1:$3.5300
      • 10:$3.0000
      • 100:$2.4000
      • 500:$2.0900
      • 1000:$1.7500
      • 2000:$1.6200
      • 5000:$1.5700
      • 10000:$1.5100
      FQP7N80C
      DISTI # C1S541901511605      		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		8600
      • 1000:$0.8717
      • 500:$1.0330
      • 100:$1.2926
      • 10:$1.5603
      FQP7N80C
      DISTI # 1095073      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		358
      • 1:£1.5900
      • 10:£1.2200
      • 100:£0.9440
      • 250:£0.8850
      • 500:£0.8250
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      可用性
      库存:
      Available
      订购:
      1984
      输入数量:
      FQP7N80C的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$2.23
      US$2.23
      10
      US$1.89
      US$18.90
      100
      US$1.51
      US$151.00
      500
      US$1.32
      US$660.00
      1000
      US$1.10
      US$1 100.00
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