IPP260N06N3G

Mfr. #:: IPP260N06N3G
制造商:: Rochester Electronics, LLC
描述:: Power Field-Effect Transistor, 27A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
生命周期:: 制造商新产品。
数据表:: IPP260N06N3G 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

Tags: IPP260, IPP26, IPP2, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP260N06N3G 描述

***et: Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220

***i-Key: MOSFET N-CH 60V 27A TO220-3

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ical: Trans MOSFET N-CH 60V 21A 3-Pin (3+Tab) TO-220F Rail

***ser: MOSFETs TO-220F N-CH 60V 21A

***Yang: N-CH/60V/21A/0.04OHM - Bulk

***inecomponents.com: 60V N-Channel QFET

***el Nordic: Contact for details

***et: Trans MOSFET N-CH 55V 25A 3-Pin TO-220

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***p One Stop Global: Trans MOSFET N-CH 60V 15.7A 3-Pin(3+Tab) TO-220F Rail

***emi: N-Channel QFET® MOSFET 60V, 15.7A, 52mΩ

***nell: MOSFET, N CH, 60V, 15.7A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

***(Formerly Allied Electronics): MOSFET, 60V, 14A, 71 MOHM, 13.3 NC QG, TO-220 FULLPACK

***p One Stop: Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) TO-220 Full-Pak

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):71mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes

***ical: Trans MOSFET P-CH 60V 12A 3-Pin (3+Tab) TO-220F Rail

***ser: MOSFETs 60V P-Channel QFET

***el Nordic: Contact for details

***icroelectronics: N-channel 60V - 0.06 Ohm - 20A - TO-220 STripFET(TM) II Power MOSFET

***ure Electronics: N-Channel 60 V 70 mOhm Flange Mount STripFET II Power MOSFET - TO-220

***ical: Trans MOSFET N-CH 60V 20A 3-Pin (3+Tab) TO-220 Tube

***r Electronics: Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes

Market price

型号	制造商	描述	库存	价格
IPP260N06N3GXKSA1 DISTI # IPP260N06N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 27A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP260N06N3 G DISTI # IPP260N06N3G	Infineon Technologies AG	Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP260N06N3G) RoHS: Not Compliant Min Qty: 1042 Container: Bulk	Americas - 0	10420:$0.3039 5210:$0.3099 3126:$0.3209 2084:$0.3329 1042:$0.3449
IPP260N06N3 G DISTI # 726-IPP260N06N3G	Infineon Technologies AG	MOSFET N-Ch 60V 27A TO220-3 RoHS: Compliant	0
IPP260N06N3GHKSA1 DISTI # 726-IPP260N06N3GHKSA	Infineon Technologies AG	MOSFET RoHS: Compliant	0
IPP260N06N3G	Infineon Technologies AG	Power Field-Effect Transistor, 27A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	276	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900

图片	型号	描述
	Mfr.#: IPP260N06N3 G OMO.#: OMO-IPP260N06N3-G-1190	Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220 - Bulk (Alt: IPP260N06N3G)
	Mfr.#: IPP260N06N3 G,IPP260N06N OMO.#: OMO-IPP260N06N3-G-IPP260N06N-1190	全新原装
	Mfr.#: IPP260N06N3G OMO.#: OMO-IPP260N06N3G-1190	Power Field-Effect Transistor, 27A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IPP260N06N3GS OMO.#: OMO-IPP260N06N3GS-1190	全新原装
	Mfr.#: IPP260N06N3GXK OMO.#: OMO-IPP260N06N3GXK-1190	全新原装
	Mfr.#: IPP260N06N3GXKSA1 OMO.#: OMO-IPP260N06N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 27A TO220-3

IPP260N06N3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes