SI2334DS-T1-GE3

SI2334DS-T1-GE3
Mfr. #:
SI2334DS-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3
生命周期:
制造商新产品。
数据表:
SI2334DS-T1-GE3 数据表
交货:
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支付:
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HTML Datasheet:
SI2334DS-T1-GE3 DatasheetSI2334DS-T1-GE3 Datasheet (P4-P6)SI2334DS-T1-GE3 Datasheet (P7-P9)SI2334DS-T1-GE3 Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI2
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
单位重量:
0.000282 oz
Tags
SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 30V 4.9A SOT-23
***
N-CHANNEL 30-V (D-S)
***ark
; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***nell
MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On State Resistance:0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:4.2A; Power Dissipation:1.3W
***ment14 APAC
MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.3W; Voltage Vgs Max:8V
型号 制造商 描述 库存 价格
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
240In Stock
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
240In Stock
  • 100:$0.4088
  • 10:$0.5480
  • 1:$0.6400
SI2334DS-T1-GE3
DISTI # SI2334DS-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 4.9A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2334DS-T1-GE3
    DISTI # 86R3871
    Vishay IntertechnologiesMOSFET Transistor, N Channel, 4.9 A, 30 V, 0.035 ohm, 4.5 V, 400 mV0
      SI2334DS-T1-GE3
      DISTI # 23T8499
      Vishay IntertechnologiesMOSFET,N CH,30V,4.9A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.3W,Operating RoHS Compliant: Yes0
        SI2334DS-T1-GE3
        DISTI # 78-SI2334DS-T1-GE3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2336DS-T1-GE3
        RoHS: Compliant
        9866
        • 1:$0.6400
        • 10:$0.4880
        • 100:$0.3620
        • 500:$0.2980
        • 1000:$0.2300
        • 3000:$0.2250
        SI2334DS-T1-GE3
        DISTI # 1858943
        Vishay IntertechnologiesMOSFET,N CH,30V,4.9A,DIODE,SOT23
        RoHS: Compliant
        5279
        • 500:£0.1640
        • 250:£0.1650
        • 100:£0.1660
        • 25:£0.1970
        • 5:£0.2110
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        可用性
        库存:
        Available
        订购:
        1992
        输入数量:
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