FQPF6N80CT

Mfr. #:: FQPF6N80CT
制造商:: ON Semiconductor
描述:: MOSFET N-CH 800V 5.5A TO-220F
生命周期:: 制造商新产品。
数据表:: FQPF6N80CT 数据表
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产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 管子

单位重量: 0.080072 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 51 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 44 ns

上升时间: 65 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 5.5 A

Vds-漏-源-击穿电压: 800 V

Rds-On-Drain-Source-Resistance: 2.5 Ohms

晶体管极性: N通道

典型关断延迟时间: 47 ns

典型开启延迟时间: 26 ns

正向跨导最小值: 5.4 S

通道模式: 增强

Tags: FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQPF6N80CT 描述

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F

***et Europe: Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail

***nell: MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

型号	制造商	描述	库存	价格
FQPF6N80CT DISTI # FQPF6N80CT-ND	ON Semiconductor	MOSFET N-CH 800V 5.5A TO-220F RoHS: Compliant Min Qty: 1 Container: Tube	757In Stock	500:$1.3296 100:$1.7095 10:$2.1270 1:$2.3600
FQPF6N80CT DISTI # FQPF6N80CT	ON Semiconductor	Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.8239 2000:$0.8189 4000:$0.8079 6000:$0.7979 10000:$0.7779
FQPF6N80CT DISTI # FQPF6N80CT	ON Semiconductor	Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.3049 10:€1.0679 25:€0.9129 50:€0.8289 100:€0.8159 500:€0.8029 1000:€0.7909
FQPF6N80CT	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	70	1000:$1.1800 500:$1.2400 100:$1.2900 25:$1.3500 1:$1.4500
FQPF6N80CT DISTI # 512-FQPF6N80CT	ON Semiconductor	MOSFET 800V N-Ch Adv Q-FET C-Series RoHS: Compliant	734	1:$2.0400 10:$1.7300 100:$1.3900 500:$1.2100 1000:$1.0100 2000:$0.9330 5000:$0.8980

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