IRG4PC30FDPBF

IRG4PC30FDPBF
Mfr. #:
IRG4PC30FDPBF
制造商:
Infineon Technologies
描述:
IGBT Transistors 600V Fast 1-8kHz
生命周期:
制造商新产品。
数据表:
IRG4PC30FDPBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IRG4PC30FDPBF DatasheetIRG4PC30FDPBF Datasheet (P4-P6)IRG4PC30FDPBF Datasheet (P7-P9)IRG4PC30FDPBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRG4PC30FDPBF 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
1.8 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
31 A
Pd - 功耗:
100 W
最低工作温度:
- 55 C
打包:
管子
高度:
20.7 mm
长度:
15.87 mm
宽度:
5.31 mm
品牌:
英飞凌科技
产品类别:
IGBT晶体管
出厂包装数量:
400
子类别:
IGBT
第 # 部分别名:
SP001541864
单位重量:
1.340411 oz
Tags
IRG4PC30F, IRG4PC3, IRG4PC, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRG4PC30 Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-247AC
***ineon SCT
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 83 ns Power dissipation: 100 W
***nell
IGBT, SINGLE, N-CH, 600V, 31A, TO-247AC; DC Collector Current: 31A; Collector Emitter Saturation Voltage Vce(on): 1.99V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; N
***p One Stop Global
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.95 V Current release time: 80 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Power Dissipation, Pd:100W; Package/Case:TO-247AC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:23A; Mounting Type:Through Hole; Voltage Rating:600V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:23A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:23A; Current Temperature:25°C; Fall Time Max:80ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***el Electronic
Inductor RF Chip Thin Film 16nH 3% 500MHz 12Q-Factor 200mA 950mOhm DCR 0201 T/R
***ure Electronics
IRG4PC30KDPBF Series 600 V 16 A N-Channel UltraFast IGBT - TO-247AC
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | IGBT 600V 28A 100W TO247AC
***ark
IGBT; Transistor Type:IGBT; Continuous Collector Current, Ic:28A; Power Dissipation, Pd:100W; Collector Emitter Voltage, V(br)ceo:600V; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Leaded Process Compatible:No RoHS Compliant: No
***ment14 APAC
IGBT, W/DIODE, 1200V, 60A, TO247AC; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:28A; Fall Time Max:120ns; Package / Case:TO-247AC; Power Dissipation Max:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, COMP, N-CH 600V SMPS II SERIES IGBT W/STEALTH DIODE - Bulk
***i-Key
IGBT N-CH SMPS 600V 28A TO247
***ser
IGBTs Comp, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***ical
Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***et
TO-247, SINGLE, N-CHANNEL 600V SMPS II SERIES IGBT
***i-Key
IGBT 600V 28A 125W TO247
***ser
IGBTs Sgl, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型号 制造商 描述 库存 价格
IRG4PC30FDPBF
DISTI # 31073883
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-247AC Tube498
  • 150:$2.2944
  • 5:$2.6016
IRG4PC30FDPBF
DISTI # IRG4PC30FDPBF-ND
Infineon Technologies AGIGBT 600V 31A 100W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Bag
674In Stock
  • 1000:$2.4880
  • 500:$2.9500
  • 100:$3.4654
  • 10:$4.2300
  • 1:$4.7100
IRG4PC30FDPBF
DISTI # IRG4PC30FDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PC30FDPBF)
RoHS: Compliant
Min Qty: 250
Container: Tube
Americas - 0
  • 250:$2.2900
  • 300:$2.1900
  • 550:$2.0900
  • 1250:$2.0900
  • 2500:$1.9900
IRG4PC30FDPBF
DISTI # 63J7507
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 63J7507)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
    IRG4PC30FDPBF
    DISTI # 63J7507
    Infineon Technologies AGSINGLE IGBT, 600V, 31A,DC Collector Current:31A,Collector Emitter Saturation Voltage Vce(on):1.59V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes45
    • 500:$2.8100
    • 250:$3.1300
    • 100:$3.3000
    • 50:$3.4700
    • 25:$3.6300
    • 10:$3.8000
    • 1:$4.4800
    IRG4PC30FDPBF
    DISTI # 70018452
    Infineon Technologies AG600V FAST 1-8 KHZ COPACK IGBT IN A TO-247AC PACKAGE
    RoHS: Compliant
    0
    • 1:$6.2600
    • 10:$5.5200
    • 100:$4.8100
    • 500:$4.1700
    • 1000:$3.6800
    IRG4PC30FDPBF
    DISTI # 942-IRG4PC30FDPBF
    Infineon Technologies AGIGBT Transistors 600V Fast 1-8kHz
    RoHS: Compliant
    641
    • 1:$4.4800
    • 10:$3.8000
    • 100:$3.3000
    • 250:$3.1300
    • 500:$2.8100
    • 1000:$2.3700
    • 2500:$2.2500
    IRG4PC30FDPBF
    DISTI # 5430210P
    Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 31A TO247AC, TU2
    • 500:£2.0000
    • 250:£2.2200
    • 100:£2.3100
    • 25:£2.3600
    IRG4PC30FDPBF
    DISTI # IRG4PC30FDPBF
    Infineon Technologies AGTransistor: IGBT,600V,31A,100W,TO247-348
    • 1:$3.9000
    • 3:$3.5100
    • 10:$3.1100
    • 50:$2.6000
    IRG4PC30FDPBF
    DISTI # IGBT1742
    Infineon Technologies AGIGBT 600V17A1,59VTO-247
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 400:$2.2400
    IRG4PC30FDPBF
    DISTI # 2576902
    Infineon Technologies AGIGBT, SINGLE, N-CH, 600V, 31A, TO-247AC
    RoHS: Compliant
    798
    • 500:£1.8200
    • 250:£1.8700
    • 100:£1.9300
    • 10:£1.9800
    • 1:£3.8600
    IRG4PC30FDPBF
    DISTI # 2576902
    Infineon Technologies AGIGBT, SINGLE, N-CH, 600V, 31A, TO-247AC
    RoHS: Compliant
    798
    • 5000:$3.2600
    • 2500:$3.3900
    • 1000:$3.5700
    • 500:$4.2300
    • 250:$4.7200
    • 100:$4.9700
    • 10:$5.7300
    • 1:$6.7500
    图片 型号 描述
    LMC6034IM/NOPB

    Mfr.#: LMC6034IM/NOPB

    OMO.#: OMO-LMC6034IM-NOPB

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    Mfr.#: CY62136EV30LL-45BVXI

    OMO.#: OMO-CY62136EV30LL-45BVXI

    SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
    EEU-FS0J182L

    Mfr.#: EEU-FS0J182L

    OMO.#: OMO-EEU-FS0J182L

    Aluminum Electrolytic Capacitors - Radial Leaded 6.3VDC 1800uF 9000H 8x20mm
    SN74HC244N

    Mfr.#: SN74HC244N

    OMO.#: OMO-SN74HC244N

    Buffers & Line Drivers Tri-State Octal
    3522-2

    Mfr.#: 3522-2

    OMO.#: OMO-3522-2

    Fuse Holder AUTO FUSEHOLDER .025
    01530009Z

    Mfr.#: 01530009Z

    OMO.#: OMO-01530009Z

    Fuse Holder Inline Vertical Mount
    90142-0026

    Mfr.#: 90142-0026

    OMO.#: OMO-90142-0026-MOLEX

    Headers & Wire Housings 2.54MM CGRIDIII HSG 26P DR CRIMP
    JS1-12V-F

    Mfr.#: JS1-12V-F

    OMO.#: OMO-JS1-12V-F-PANASONIC

    General Purpose Relays 10A 12VDC SPDT SEALED PCB
    LMC6034IM/NOPB

    Mfr.#: LMC6034IM/NOPB

    OMO.#: OMO-LMC6034IM-NOPB-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps CMOS Quad Op Amp
    01530009Z

    Mfr.#: 01530009Z

    OMO.#: OMO-01530009Z-LITTELFUSE

    Fuse Holder Inline Vertical Mount
    可用性
    库存:
    826
    订购:
    2809
    输入数量:
    IRG4PC30FDPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$4.48
    US$4.48
    10
    US$3.80
    US$38.00
    100
    US$3.30
    US$330.00
    250
    US$3.13
    US$782.50
    500
    US$2.81
    US$1 405.00
    1000
    US$2.37
    US$2 370.00
    2500
    US$2.25
    US$5 625.00
    5000
    US$2.16
    US$10 800.00
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