FMR23N50ES

FMR23N50ES
Mfr. #:
FMR23N50ES
制造商:
Fuji Electric Co Ltd
描述:
Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET
生命周期:
制造商新产品。
数据表:
FMR23N50ES 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
FMR23N5, FMR23, FMR2, FMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
FMR23N50ES
DISTI # FE0000000001050
Fuji Electric Co LtdPower Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FMR23N50ESSC
    DISTI # FE0000000004657
    Fuji Electric Co LtdMOSFET
    RoHS: Compliant
    0 in Stock0 on Order
      图片 型号 描述
      FMR23N50E

      Mfr.#: FMR23N50E

      OMO.#: OMO-FMR23N50E-1190

      Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET
      FMR23N50ES

      Mfr.#: FMR23N50ES

      OMO.#: OMO-FMR23N50ES-1190

      Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET
      FMR23N57E

      Mfr.#: FMR23N57E

      OMO.#: OMO-FMR23N57E-1190

      全新原装
      FMR23N57E,23N57E

      Mfr.#: FMR23N57E,23N57E

      OMO.#: OMO-FMR23N57E-23N57E-1190

      全新原装
      FMR23N60E

      Mfr.#: FMR23N60E

      OMO.#: OMO-FMR23N60E-1190

      Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
      FMR23N60ES

      Mfr.#: FMR23N60ES

      OMO.#: OMO-FMR23N60ES-1190

      Power Field-Effect Transistor, 23A I(D),600V,0.28ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
      可用性
      库存:
      Available
      订购:
      4500
      输入数量:
      FMR23N50ES的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
      从...开始
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