IRFH5220TR2PBF

Mfr. #:: IRFH5220TR2PBF
制造商:: Infineon Technologies
描述:: MOSFET N-CH 200V 3.8A PQFN
生命周期:: 制造商新产品。
数据表:: IRFH5220TR2PBF 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

Tags: IRFH52, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5220TR2PBF 描述

***ernational Rectifier: 200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package

***ical: Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R

***ied Electronics & Automation: MOSFET N-Ch 200V 3.8A HEXFET PQFN8EP

***i-Key: MOSFET N-CH 200V 3.8A PQFN

***trelec: MOSFET [IR] IRFH5220TR2PBF MOSFET

***ark: N CH MOSFET, 200V, 3.8A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; No. of Pins:8 ;RoHS Compliant: Yes

***nell: MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; Voltage Vgs Max:20V

***ment14 APAC: MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V

Market price

型号	制造商	描述	库存
IRFH5220TR2PBF DISTI # IRFH5220TR2PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 3.8A PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRFH5220TR2PBF DISTI # IRFH5220TR2PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 3.8A PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRFH5220TR2PBF DISTI # 942-IRFH5220TR2PBF	Infineon Technologies AG	MOSFET MOSFT 200V 20A 100mOhm 20nC Qg RoHS: Compliant	0
IRFH5220TR2PBF	International Rectifier	RoHS: Compliant	800

IRFH5220TR2PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes