SIZ914DT-T1-GE3

Name: Vishay - SIZ914DT-T1-GE3
Brand: Vishay
SKU: OMO-2822990
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIZ914DT-T1-GE3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 30V 16/40A 23/100W TrenchFET
生命周期:: 制造商新产品。
数据表:: SIZ914DT-T1-GE3 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: 8-WDFN Exposed Pad

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-PowerPairR

配置: 双重的

FET型: 2 N-Channel (Half Bridge)

最大功率: 22.7W, 100W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 1208pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 16A, 40A

Rds-On-Max-Id-Vgs: 6.4 mOhm @ 19A, 10V

Vgs-th-Max-Id: 2.4V @ 250μA

栅极电荷-Qg-Vgs: 26nC @ 10V

钯功耗: 22.7 W 100 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 5 ns 19 ns

上升时间: 11 ns 127 ns

VGS-栅极-源极-电压: - 16 V + 20 V

Id 连续漏极电流: 16 A 40 A

Vds-漏-源-击穿电压: 30 V 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.2 V 1 V

Rds-On-Drain-Source-Resistance: 6.4 mOhms 1.37 mOhms

晶体管极性: N通道

典型关断延迟时间: 15 ns 40 ns

典型开启延迟时间: 16 ns 40 ns

Qg-门电荷: 17 nC 66 nC

正向跨导最小值: 55 S 68 S

通道模式: 增强

Tags: SIZ91, SIZ9, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ914DT-T1-GE3 描述

***ical: Trans MOSFET N-CH Si 30V 16A/40A 8-Pin PowerPAIR EP

***et: Trans MOSFET N-CH 30V 16A/40A 8-Pin PowerPAIR T/R

***i-Key: MOSFET 2N-CH 30V 16A PWRPAIR

***ark: DUAL N-CHANNEL 30-V (D-S) MOSFETS

***: DUAL N-CHANNEL 30V

Market price

型号	制造商	描述	库存	价格
SIZ914DT-T1-GE3 DISTI # SIZ914DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A PWRPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.8219
SIZ914DT-T1-GE3 DISTI # SIZ914DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A PWRPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3000In Stock	1000:$0.9093 500:$1.0975 100:$1.4110 10:$1.7560 1:$1.9400
SIZ914DT-T1-GE3 DISTI # SIZ914DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A PWRPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3000In Stock	1000:$0.9093 500:$1.0975 100:$1.4110 10:$1.7560 1:$1.9400
SIZ914DT-T1-GE3 DISTI # 781-SIZ914DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 RoHS: Compliant	0
SIZ914DT-T1-GE3	Vishay Intertechnologies		2811

SIZ914DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes