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RGTH40TS65DGC11

RGTH40TS65DGC11
Mfr. #:
RGTH40TS65DGC11
制造商:
ROHM Semiconductor
描述:
IGBT Transistors 650V 20A IGBT Stop Trench
生命周期:
制造商新产品。
数据表:
RGTH40TS65DGC11 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
RGTH40TS65DGC11 更多信息
产品属性
属性值
制造商：
罗姆半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
40 A
Pd - 功耗：
144 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
RGTH40TS65
打包：
管子
连续集电极电流 Ic 最大值：
85 A
工作温度范围：
- 40 C to + 175 C
品牌：
罗姆半导体
连续集电极电流：
20 A
栅极-发射极漏电流：
+/- 200 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
RGTH40TS65D
单位重量：
1.340411 oz
Tags
RGTH40TS, RGTH4, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 650V 40A 144000mW 3-Pin(3+Tab) TO-247N Bulk
***ure Electronics
650V 20A TO-247N Field Stop Trench IGBT
***ark
Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:144W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***i-Key
IGBT TRNCH FIELD 650V 40A TO247N
***ical
Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant: Yes
*** Services
CoC and 2-years warranty / RFQ for pricing
***p One Stop Global
Trans IGBT Chip N-CH 600V 34A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PC30SPbF Series 600 V 34 A Flange Mount Standard Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.4 V Current release time: 390 ns Power dissipation: 100 W
***nell
IGBT, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:1.6V; Power Dissipation:100W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:68A; No. of Pins:3; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:590ns; Time, Rise:19ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 32A, TO-247AD-3; DC Collector Current: 32A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o
***ark
Igbt, 600V, 32A, 140W, To-247Ad; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
型号 制造商 描述 库存 价格
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11-ND		ROHM SemiconductorIGBT 650V 40A 144W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 2520:$1.2460
  • 510:$1.5575
  • 120:$1.8957
  • 30:$2.2250
  • 10:$2.3590
  • 1:$2.6300
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube (Alt: RGTH40TS65DGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 5000:€1.2075
  • 1000:€1.2420
  • 500:€1.5295
  • 100:€1.6790
  • 25:€2.2425
  • 1:€2.5760
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH40TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.0900
  • 4500:$1.0900
  • 1800:$1.1900
  • 900:$1.2900
  • 450:$1.3900
RGTH40TS65DGC11
DISTI # 76Y4973		ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:144W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes400
  • 5000:$1.1600
  • 2500:$1.2000
  • 1000:$1.4800
  • 500:$1.6500
  • 100:$1.7800
  • 10:$2.2200
  • 1:$2.6100
RGTH40TS65DGC11
DISTI # 755-RGTH40TS65DGC11		ROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant		554
  • 1:$2.6200
  • 10:$2.2300
  • 100:$1.7800
  • 500:$1.5600
  • 1000:$1.3000
  • 2500:$1.2100
  • 5000:$1.1600
RGTH40TS65DGC11
DISTI # 1501475		ROHM SemiconductorIGBT N-CHANNEL 40A 650V TRENCH TO-247, PK5
  • 250:£1.3860
  • 50:£1.4660
  • 25:£1.5680
  • 10:£1.7920
  • 5:£2.0380
RGTH40TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 22:$3.2200
  • 7:$3.5420
  • 1:$4.8300
RGTH40TS65DGC11
DISTI # 2519792		ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3
RoHS: Compliant		400
  • 30:$3.3800
  • 10:$3.5900
  • 1:$3.9900
RGTH40TS65DGC11
DISTI # 2519792		ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3400
  • 500:£1.3300
  • 250:£1.4100
  • 100:£1.4900
  • 10:£1.5600
  • 1:£2.0800
RGTH40TS65DGC11ROHM Semiconductor 30
  • 1:¥37.9835
  • 100:¥21.5366
  • 450:¥13.6542
RGTH40TS65DGC11ROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH40TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.1800
    • 10:$2.3900
    • 50:$2.1000
    • 100:$1.8000
    • 500:$1.6700
    • 1000:$1.6100
    图片 型号 描述
    IKW15N120H3FKSA1

    Mfr.#: IKW15N120H3FKSA1

    OMO.#: OMO-IKW15N120H3FKSA1

    		 IGBT Transistors IGBT PRODUCTS
    IXYH30N65C3H1

    Mfr.#: IXYH30N65C3H1

    OMO.#: OMO-IXYH30N65C3H1

    		 IGBT Transistors 650V/60A XPT C3 Copacked TO-247
    IXYH40N65C3H1

    Mfr.#: IXYH40N65C3H1

    OMO.#: OMO-IXYH40N65C3H1

    		 IGBT Transistors 650V/80A XPT Copacked TO-247
    IXYP10N65C3D1

    Mfr.#: IXYP10N65C3D1

    OMO.#: OMO-IXYP10N65C3D1

    		 IGBT Transistors DISC IGBT XPT-GENX3
    IXYP10N65C3D1

    Mfr.#: IXYP10N65C3D1

    OMO.#: OMO-IXYP10N65C3D1-IXYS-CORPORATION

    		 IGBT 650V 30A 160W TO-220
    IKW15N120H3FKSA1

    Mfr.#: IKW15N120H3FKSA1

    OMO.#: OMO-IKW15N120H3FKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 1200V 30A 217W TO247-3
    IXYH40N65C3H1

    Mfr.#: IXYH40N65C3H1

    OMO.#: OMO-IXYH40N65C3H1-IXYS-CORPORATION

    		 IGBT Transistors 650V/80A XPT Copacked TO-247
    IXYH30N65C3H1

    Mfr.#: IXYH30N65C3H1

    OMO.#: OMO-IXYH30N65C3H1-IXYS-CORPORATION

    		 IGBT Transistors 650V/60A XPT C3 Copacked TO-247
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    RGTH40TS65DGC11的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.62
    US$2.62
    10
    US$2.23
    US$22.30
    100
    US$1.78
    US$178.00
    500
    US$1.56
    US$780.00
    1000
    US$1.30
    US$1 300.00
    2500
    US$1.21
    US$3 025.00
    5000
    US$1.16
    US$5 800.00
    10000
    US$1.12
    US$11 200.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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