IKP20N65F5

Mfr. #:: IKP20N65F5
制造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS TrenchStop 5
生命周期:: 制造商新产品。
数据表:: IKP20N65F5 数据表
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ECAD Model:
更多信息:: IKP20N65F5 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: IGBT - 单

打包: 管子

部分别名: IKP20N65F5XKSA1 SP001133076

单位重量: 0.211644 oz

安装方式: 通孔

包装盒: TO-220-3

配置: 单身的

钯功耗: 125 W

最高工作温度: + 175 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 42 A

栅极-发射极-漏电流: 100 nA

最大栅极发射极电压: 20 V

Tags: IKP20N65F, IKP20N65, IKP20, IKP2, IKP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKP20N65F5 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

型号	制造商	描述	库存	价格
IKP20N65F5XKSA1 DISTI # V99:2348_06376913	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 42A Tube RoHS: Compliant	974	100:$1.9620 25:$2.0880 10:$2.2770 1:$2.7522
IKP20N65F5XKSA1 DISTI # IKP20N65F5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 42A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.7982
IKP20N65F5XKSA1 DISTI # 26197143	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 42A Tube RoHS: Compliant	974	100:$2.1081 25:$2.2392 10:$2.4392 5:$2.6875
IKP20N65F5 DISTI # 726-IKP20N65F5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant	233	1:$2.8800 10:$2.4400 100:$1.9500 500:$1.7100 1000:$1.4100 2500:$1.3200 5000:$1.2700
IKP20N65F5	Infineon Technologies AG	Insulated Gate Bipolar Transistor RoHS: Compliant	20	1000:$1.1100 500:$1.1600 100:$1.2100 25:$1.2600 1:$1.3600
IKP20N65F5XKSA1 DISTI # IKP20N65F5	Infineon Technologies AG	650V 42A 125W TO220 RoHS: Compliant	50	1:€1.8300 10:€1.4300 50:€1.2300 100:€1.1300

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