MR20H40CDF

Mfr. #:: MR20H40CDF
制造商:: Everspin Technologies
描述:: NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI
生命周期:: 制造商新产品。
数据表:: MR20H40CDF 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR20H40CDF 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: MR20H40

打包: 托盘替代包装

单位重量: 0.001319 oz

安装方式: 贴片/贴片

工作温度范围: - 40 C to + 85 C

包装盒: DFN-8

工作温度: -40°C ~ 85°C (TA)

界面: SPI 串行

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 8-DFN-EP, Small Flag (5x6)

内存大小: 4M (512K x 8)

内存型: MRAM（磁阻RAM）

速度: 50MHz

访问时间: 20 ns

格式化内存: 内存

钯功耗: 0.6 W

最高工作温度: + 85 C

最低工作温度: - 40 C

接口类型: SPI

组织: 512 k x 8

数据总线宽度: 8 bit

最大电源电压: 3.6 V

电源电压最小值: 3 V

Tags: MR20H, MR20, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR20H40CDF 评级和评论

Y***v

Working good, loud noise

2019-07-29

S***n

The parcel came. Until i checked

2019-05-22

E**w

Perfect

2019-04-11

D***y

Corresponds to the description.

2019-06-11

MR20H40CDF 描述

***ure Electronics: MR20H40 Series 4 Mbit (512 k x 8) 3.3 V Serial I/O (SPI) 50 MHz - DFN-8

***ical: MRAM 4Mbit Serial-SPI Interface 3.3V 8-Pin DFN EP Tray

***i-Key: IC RAM 4MBIT SPI 50MHZ 8DFN

***S: new, original packaged

MR20H40CDF 更多信息

MR2A08A / MR2A16A 4Mb Parallel MRAM: Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Market price

型号	制造商	描述	库存	价格
MR20H40CDF DISTI # 819-1043-ND	Everspin Technologies	IC RAM 4M SPI 50MHZ 8DFN RoHS: Compliant Min Qty: 1 Container: Tray	2051In Stock	570:$13.6059 250:$13.7184 100:$14.1992 50:$16.1736 25:$16.5828 10:$16.7670 1:$18.0000
MR20H40CDFR DISTI # MR20H40CDFR-ND	Everspin Technologies	IC RAM 4M SPI 50MHZ 8DFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$13.8719
MR20H40CDF DISTI # MR20H40CDF	Everspin Technologies	-40 TO +85C/ (Alt: MR20H40CDF) RoHS: Compliant Min Qty: 1	Europe - 0	1:€16.1900 10:€14.8900 25:€14.2900 50:€13.6900 100:€13.1900 500:€12.6900 1000:€11.8900
MR20H40CDF DISTI # 936-MR20H40CDF	Everspin Technologies	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI RoHS: Compliant	1137	1:$18.0100 5:$17.4800 10:$16.7700 25:$16.5800 50:$16.1700 100:$14.2000 250:$13.7200 500:$13.6100
MR20H40CDFR DISTI # 936-MR20H40CDFR	Everspin Technologies	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI RoHS: Compliant	0	4000:$13.8700

图片	型号	描述
	Mfr.#: MR20H40CDF OMO.#: OMO-MR20H40CDF	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI
	Mfr.#: MR20H40CDFR OMO.#: OMO-MR20H40CDFR	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI
	Mfr.#: MR20H40DF OMO.#: OMO-MR20H40DF	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI
	Mfr.#: MR20H40CDFR OMO.#: OMO-MR20H40CDFR-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI
	Mfr.#: MR20H40CDF OMO.#: OMO-MR20H40CDF-EVERSPIN-TECHNOLOGIES	NVRAM 4Mb 3.3V 50Mhz 512K x 8 SPI